In-Situ Investigation of Wafer-Slurry-Pad Interactions during CMP
N. Braun, Caprice L Gray, Andrew J. Mueller, James Vlahakis et autres
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1 citation
Sriram Anjur
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21Publications signalées
328Citations signalées
1Affiliations récentes
Les institutions déclarées
Les domaines associés
Advanced Surface Polishing TechniquesAdvanced machining processes and optimizationIntegrated Circuits and Semiconductor Failure AnalysisForce Microscopy Techniques and ApplicationsDiamond and Carbon-based Materials Research
Les publications récentes
Modeling for pad wear control during conditioning in CMP
Toshi Kasai, Sriram Anjur, Haresh Siriwardane, Paul Feeney
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1 citation
Investigating Effect of Conditioner Aggressiveness on Removal Rate during Interlayer Dielectric Chemical Mechanical Planarization through Confocal Microscopy and Dual Emission Ultraviolet-Enhanced Fluorescence Imaging
Ting Sun, Len Borucki, Yun Zhuang, Yasa Adi Sampurno et autres
The effect of conditioner aggressiveness is investigated in interlayer dielectric polishing on three types of pad. A method using confocal microscopy is used to analyze the effect of conditioner aggressiveness on pad–wafer contact. Results show that a more aggressive conditioner produces a …
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32 citations
Japanese Journal of Applied Physics
Synchronous, In Situ Measurements in Chemical Mechanical Planarization
James Vlahakis, Chris Rogers, Vincent P. Manno, Robert D. White et autres
Achieving device- and wafer-scale planarity in integrated circuit manufacturing is increasingly challenging as device sizes are reduced to and smaller, and wafer sizes are increased from . Hence a better understanding of chemical mechanical planarization (CMP) processes is needed. We report the …
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3 citations
Journal of The Electrochemical Society
Micromachined Force Sensors for Characterization of Chemical Mechanical Polishing
Douglas A. Gauthier, Andrew J. Mueller, Robert D. White, Vincent P. Manno et autres
Micromachined structures with diameters ranging from 50 - 100 µm have been applied to the measurement of the microscale shearing forces present at the wafer-pad interface during chemical mechanical polishing (CMP). The structures are 80 µm high poly-dimethyl-siloxane posts with bending stinesses …
0 citations
Micromachined Lateral Force Sensors for Characterization of Microscale Surface Forces During Chemical Mechanical Polishing
Douglas A. Gauthier, Andrew J. Mueller, Robert D. White, Vincent P. Manno et autres
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0 citations
MRS Proceedings
Micromachined Shear Stress Sensors for Characterization of Surface Forces During Chemical Mechanical Polishing
Andrew J. Mueller, Robert D. White, Vincent P. Manno, Chris Rogers et autres
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1 citation
MRS Proceedings
Determining Pad-Wafer Contact using Dual Emission Laser Induced Fluorescence
Caprice L Gray, Chris Rogers, Vincent P. Manno, Robert D. White et autres
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9 citations
MRS Proceedings
Asperity size distribution near wafer features during CMP
Caprice L Gray, Chris Rogers, Vincent P. Manno, James Vlahakis et autres
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0 citations
Analysis of Large Particle Count in Fumed Silica Slurries and Its Correlation with Scratch Defects Generated by CMP
Edward E. Remsen, Sriram Anjur, David Boldridge, Mungai Kamiti et autres
Analysis of Large Particle Count in Fumed Silica Slurries and Its Correlation with Scratch Defects Generated by CMP, Remsen, Edward E., Anjur, Sriram, Boldridge, David, Kamiti, Mungai, Li, Shoutian, Johns, Timothy, Dowell, Charles, Kasthurirangan, Jaishankar, Feeney, Paul
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78 citations
Journal of The Electrochemical Society
Instantaneous, high resolution, in-situ imaging of slurry film thickness during CMP
Caprice L Gray, Daniel Apone, Chris Rogers, Vincent P. Manno et autres
Dual Emission Laser Induced Fluorescence (DELIF) is used to attain measurements of slurry film thickness during Chemical Mechanical Polishing (CMP). A Nd/Yag UV laser is used in tandem with two 12 bit CCD cameras with a zoom lens to obtain an instantaneous, …
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0 citations
Viewing Asperity Behavior under the Wafer during CMP
Caprice L Gray, Daniel Apone, Chris Rogers, Vincent P. Manno et autres
Recent experimental advances using dual emission laser induced fluorescence and image processing have provided high spatial and temporal resolution maps of the slurry layer during chemical mechanical polishing (CMP). Intensity differences in the images correspond to fluid layer thickness variations as the …
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11 citations
Electrochemical and Solid-State Letters
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