Bhaswar Chakrabarti

Quantifying Endurance-Driven Loss of Polarization-to-Channel Charge Coupling in HfO2-Based Ferroelectric Field-Effect Transistors

Apu Das, Agniva Paul, Zhao-Feng Lou, Masud Rana SK et autres

Abstract Hafnium-oxide (HfO2)-based ferroelectric field-effect transistors are promising for nonvolatile memory and in-memory computing; however, endurance degradation remains difficult to quantify because polarization switching and charge trapping simultaneously influence the threshold voltage. Here, we combine transfer characteristics, switching-current-derived polarization, capacitance–voltage measurements, and …

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Interfacial and Bulk Switching MoS 2 Memristors for an All-2D Reservoir Computing Framework

Asmita S. Thool, Sourodeep Roy, Prahalad Kanti Barman, Kartick Biswas et autres

In this study, we report non-filamentary resistance switching with short- and long-term memory dynamics in Au/Ti/MoS 2 /Au memristive devices. The temporal dynamics is engineered by controlling the thickness of the chemical-vapor-deposited (CVD) MoS 2 films. Monolayer (1L)-MoS 2 devices exhibit forming-free …

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Metal–Oxide Resistive Random‐Access Memory Technology: A Perspective on the Challenges and Opportunities

Bhaswar Chakrabarti, Sourodeep Roy, Shubham Pande, Masud Rana Sk

Metal–oxide-based resistive random-access memory (RRAM) technology belongs to the category of emerging nonvolatile memory technologies (eNVM). First developed in the early 2000s, it has been vigorously investigated as a replacement of Flash memory and has been proposed earlier as a Universal memory …

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Smart Pixel with TCReRAM: Tunable Capacitance for Analog Conversion Gain in Next-Generation Imaging Systems

Shubham Pande, Salil Chourasia, Krisha Suthar, Sandeep Kumar et autres

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Long-term reliability of naturally aged hafnium oxide ferroelectric transistors for energy-efficient embedded memory

Asim Senapati, Apu Das, Agniva Paul, Masud Rana Sk et autres

Ferroelectric field-effect transistors (FeFETs) based on hafnium oxide remain promising for embedded non-volatile memory, yet their long-term stability under realistic storage conditions is not well understood. Here, we examine silicon-doped hafnium oxide FeFETs that have undergone more than 5 years of natural …

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Long-term reliability of naturally aged hafnium oxide ferroelectric transistors for energy-efficient embedded memory

Asim Senapati, Apu Das, Agniva Paul, Masud Rana Sk et autres

Ferroelectric field-effect transistors (FeFETs) based on hafnium oxide remain promising for embedded non-volatile memory, yet their long-term stability under realistic storage conditions is not well understood. Here, we examine silicon-doped hafnium oxide FeFETs that have undergone more than 5 years of natural …

Impact of γ -Radiation on Volatile ZnO Memristor-Based Reservoir Computing

S. Chourasia, Sourodeep Roy, S. Chandrasekaran, Firman Mangasa Simanjuntak et autres

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A Tunable Capacitance ReRAM for Improvement of Dynamic Range in CMOS Image Sensors

S. Chourasia, S. Pande, Andrea Padovani, Luca Larcher et autres

work reports a tunable-capacitance resistive memory (TCReRAM) device. The TCReRAM uses a binary metal-oxide active-layer and exhibits strong voltage-dependent capacitance (VDC) under appropriate operating conditions. The observed VDC dynamics is characterized experimentally, and its physical origin is investigated through comprehensive multiscale simulations. …

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RRAM-based Tunable Chaotic Circuit for Random Number Generation

Leela Prashanth Bhimavarapu, Salil Chourasia, Bhaswar Chakrabarti

This work presents an RC-based chaotic variant of Chua’s circuit with a bipolar non-volatile RRAM device as the nonlinear element. The circuit’s electrical behavior is made tunable by programming the internal device state. A Random Number Generator based on the proposed circuit …

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Many-fold Performance Enhancement of Flexible Capacitive Force Sensor Response using a Thin Graphene Oxide Layer

Shree Harsha Kn, M. Manivannan, Soumya Dutta, Bhaswar Chakrabarti

This paper presents the fabrication and characterization of flexible capacitive force sensors with spin-coated graphene oxide (GO) layers at various rotation per minutes (rpm). GO-modified sensors, based on interdigitated electrode structures on PDMS, are systematically compared to uncoated sensors. Experimental results show …

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Long-term reliability of naturally aged hafnium oxide ferroelectric transistors for energy-efficient embedded memory

Asim Senapati, Apu Das, Agniva Paul, Masud Rana Sk et autres

Ferroelectric field-effect transistors based on hafnium oxide remain promising for embedded non-volatile memory, yet their long-term stability under realistic storage conditions is not well understood. Here, we examine silicon-doped hafnium oxide FeFETs that have undergone more than five years of natural aging …

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Trapping Dynamics and Endurance in HfO 2 -FeFETs: An Insight From Charge Pumping

Masud Rana Sk, Asim Senapati, Gautham Kumar, Yannick Raffel et autres

We investigate endurance degradation in hafnium oxide (HfO₂)-based ferroelectric field effect transistors (FeFETs) by analyzing interface (Nit) and near-interface oxide traps (Nox) using a two-level charge pumping (CP) technique. After 10⁴ program (PG) / erase (ER) cycles at ±5 V, 100 ns,Nitincreases …

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