Metal–Oxide Resistive Random‐Access Memory Technology: A Perspective on the Challenges and Opportunities

Le résumé fourni par la source

Metal–oxide-based resistive random-access memory (RRAM) technology belongs to the category of emerging nonvolatile memory technologies (eNVM). First developed in the early 2000s, it has been vigorously investigated as a replacement of Flash memory and has been proposed earlier as a Universal memory that can combine non-volatility with high speed. Despite more than 20 years of research, the promise of RRAM as the next-generation Universal memory remains elusive. Despite its limitations, RRAM has become popular in Compute-In-Memory (CIM) applications which can benefit from its high storage density and relatively low (in comparison to Flash) latency. Recent studies on embedded RRAMs also indicate adequate performance and reliability. In this chapter, we present an overview of the technology and discuss its potential as an eNVM technology in the modern application space. We point out the limitations of the technology and discuss design methodologies for cell- and array-level implementations. Finally, we elaborate on various applications of the metal–oxide RRAM technology and discuss the recent developments.

Ce résumé expose les affirmations des auteurs. BNTIC ne l’interprète pas comme une validation indépendante des résultats.