Agniva Paul

Hardware-aware quantum error correction using cryogenic FeFET-weighted Max-SAT decoding

Agniva Paul, Apu Das, Ankita Dutta, Debraj Barman et autres

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Vacancy-Assisted Polarization-Catastrophe Framework for Wake-Up and Ferroelectricity in Hafnium Oxide

Agniva Paul, Apu Das, Jonas Müller, Mohit Tewari et autres

Ferroelectric wake-up in hafnium oxide remains one of the key unresolved problems in oxide electronics. Here, we combine four-dimensional scanning transmission electron microscopy (4D-STEM), X-ray photoelectron spectroscopy (XPS), first-principles calculations, electrical characterization, and theoretical modeling to investigate wake-up in TaN/Hf0.5Zr0.5O2/TiN capacitors. Although …

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Quantifying Endurance-Driven Loss of Polarization-to-Channel Charge Coupling in HfO2-Based Ferroelectric Field-Effect Transistors

Apu Das, Agniva Paul, Zhao-Feng Lou, Masud Rana SK et autres

Abstract Hafnium-oxide (HfO2)-based ferroelectric field-effect transistors are promising for nonvolatile memory and in-memory computing; however, endurance degradation remains difficult to quantify because polarization switching and charge trapping simultaneously influence the threshold voltage. Here, we combine transfer characteristics, switching-current-derived polarization, capacitance–voltage measurements, and …

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Endurance Paradox in Hafnium-Oxide-Based Silicon-Channel Ferroelectric Transistors

Apu Das, Agniva Paul, Mohit Tewari, Zhao-Feng Lou et autres

High Resolution Image Download MS PowerPoint Slide Hafnium-oxide-based ferroelectric field-effect transistors are widely regarded as strong candidates for embedded nonvolatile memory, but their practical deployment remains limited by premature endurance failure, typically after only about 10 4 program/erase cycles. Here, we show …

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WO x –HZO-PEALD-TiN Interface-Engineered Ferroelectric Capacitors with >2×10 10 Endurance

Agniva Paul, Gautham Kumar, Sunanda Thunder, Apu Das et autres

We demonstrate WOx–HZO–PEALD-TiN interface-engineered ferroelectric capacitors achieving >2×1010-cycle endurance and 1.5 V operation. A thin WOxinterfacial layer suppresses oxygen-vacancy-related charge trapping and mitigates local electric-field nonuniformity, while the PEALD-TiN top electrode limits defect generation during cycling. The devices exhibit a dielectric constant …

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Sub-2 nm Equivalent-Oxide-Thickness Ferroelectric Transistors for Cryogenic Memory and Computing

Apu Das, Asim Senapati, Gautham Kumar, Zhao-Feng Lou et autres

High Resolution Image Download MS PowerPoint Slide Ferroelectric hafnia-based field-effect transistors are promising candidates for nonvolatile memory and in-memory computing. However, their operation principle under deep-cryogenic conditions at aggressively scaled gate stacks remains underexplored, especially for bulk silicon technology. This work presents …

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Long-term reliability of naturally aged hafnium oxide ferroelectric transistors for energy-efficient embedded memory

Asim Senapati, Apu Das, Agniva Paul, Masud Rana Sk et autres

Ferroelectric field-effect transistors (FeFETs) based on hafnium oxide remain promising for embedded non-volatile memory, yet their long-term stability under realistic storage conditions is not well understood. Here, we examine silicon-doped hafnium oxide FeFETs that have undergone more than 5 years of natural …

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Long-term reliability of naturally aged hafnium oxide ferroelectric transistors for energy-efficient embedded memory

Asim Senapati, Apu Das, Agniva Paul, Masud Rana Sk et autres

Ferroelectric field-effect transistors (FeFETs) based on hafnium oxide remain promising for embedded non-volatile memory, yet their long-term stability under realistic storage conditions is not well understood. Here, we examine silicon-doped hafnium oxide FeFETs that have undergone more than 5 years of natural …

Sub-2 nm Equivalent-Oxide-Thickness Ferroelectric Transistors for Cryogenic Memory and Computing

Apu Das, Asim Senapati, Gautham Kumar, 娄兆锋 et autres

Ferroelectric hafnia-based field-effect transistors are promising candidates for nonvolatile memory and in-memory computing. However, their operation principle under deep-cryogenic conditions at aggressively scaled gate stacks remains underexplored, especially for bulk silicon technology. This work presents an experimental demonstration of front-end-of-line bulk silicon-channel …

Endurance Paradox in Hafnium-Oxide-Based Silicon-Channel Ferroelectric Transistors

Apu Das, Agniva Paul, Mohit Tewari, 娄兆锋 et autres

Hafnium-oxide-based ferroelectric field-effect transistors are widely regarded as strong candidates for embedded nonvolatile memory, but their practical deployment remains limited by premature endurance failure, typically after only about 104 program/erase cycles. Here, we show that this loss of device functionality is not …

HZO based FeFET with Sub 2-nm EOT Gate Stack as Synapse for Spiking Neural Network

Jaskirat Singh Maskeen, Apu Das, Gautham Kumar, Zhao-Feng Lou et autres

Ferroelectric FET (FeFET) synapses based on HZO with a sub-2 nm EOT gate stack promise dense, low-power neuromorphic hardware. Yet, their system efficacy is tightly coupled to the particulars of device-level electrical characterization. In this work, we establish a quantitative device-to-algorithm link …

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