Accès ouvert
2024
article
OpenAlex
Seong Hun Yoon, Jaehun Cho, Iaan Cho, Min Jae Kim et autres
Inside Front Cover In article number 2301185, Shong, Jeong, and co-workers explore controlling the gate swing in amorphous IGZO thin-film transistors using a plasma-enhanced atomic layer deposition. The conversion mechanism in the deposition sequence of In-Zn-Ga allows the controllable gate swing value. …
kr, us
(code pays fourni par la source)
2024
conference-paper
OpenAlex
Heung Jo Lee, Pil Sang Yun, Jong Uk Bae, Yoo Seok Park et autres
Self‐aligned a‐IGZO coplanar TFTs have high mobility, excellent large‐area uniformity, and are structurally free of parasitic caps. Accordingly, it is being adopted and mass‐produced as the backplane of OLED TV. Currently, the scope of application of OLED displays using oxide TFT backplanes …
kr
(code pays fourni par la source)
2024
conference-paper
OpenAlex
Heung Jo Lee, Pil Sang Yun, Jong Uk Bae, Yoo Seok Park et autres
In this comprehensive study, we rigorously evaluated the applicability of amorphous indium gallium zinc oxide (a‐IGZO) thin films synthesized using atomic layer deposition (ALD) technology in the field of large‐area organic light‐emitting diode (OLED) TVs. The key term to display production is …
kr
(code pays fourni par la source)
2024
article
OpenAlex
Seong Hun Yoon, Jaehun Cho, Iaan Cho, Min Jae Kim et autres
Abstract Amorphous IGZO (a‐IGZO) thin‐film transistors (TFTs) are standard backplane electronics to power active‐matrix organic light‐emitting diode (AMOLED) televisions due to their high carrier mobility and negligible low leakage characteristics. Despite their advantages, limitations in color depth arise from a steep subthreshold …
kr, us
(code pays fourni par la source)
2023
article
OpenAlex
Bang Ju Park, Sang Won Chung, Min Jae Kim, Heung Jo Lee et autres
In this letter, amorphous indium-gallium-zinc-tin oxide (${a}$-IGZTO) thin-film transistors (TFTs) were characterized with a bottom gate structure, where a single target with three cation composition ratios were used to deposit the a-IGZTO channel layer. Remarkably,${a}$-In$_{{0.60}}$Ga$_{{0.14}}$Zn$_{{0.20}}$Sn$_{{0.06}}\text{O}$TFTs exhibited exceptional performance, featuring a significantly high …
kr
(code pays fourni par la source)