Min Jae Kim

Seismic Performance Evaluation of Beam-Column Connections with Internally Reinforced Composite Beam through Experimental Testing

Dong Kwan Kim, Yae Chan Park, Min Jae Kim, Kwang Won Jo et autres

Facile preparation of phosphorous-doped graphene quantum dots/bismuth iron vanadate composite as bifunctional electrocatalysts for water splitting

Beena Mol Babu, Min Jae Kim, Tata Sanjay Kanna Sharma, Won Mook Choi

kr (code pays fourni par la source)

Growth of Highly‐Ordered‐Crystalline Indium‐Gallium‐Oxide Thin‐Film via Plasma‐Enhanced ALD for High Performance Top‐Gate Field‐Effect Transistors

Min Jae Kim, Seon Woong Bang, Jae Seok Hur, Seong Hun Yoon et autres

Abstract This study introduces a novel method for achieving highly ordered‐crystalline In 2‐x Ga x O 3 [0 ≤ x ≤ 0.6] thin films on Si substrates at 250 °C using plasma‐enhanced atomic‐layer‐deposition (PEALD) with dual seed crystal layers (SCLs) of γ‐Al …

kr (code pays fourni par la source)

Seismic Performance of Bracket Moment Connection for Framing PC Composite Beams and PSRC Composite Columns

Tae Sung Eom, Jong Jin Lim, Seong Hwan Moon, Min Jae Kim et autres

A durable cobalt catalyst supported on Ni foam coated with Al2O3 for hydrogen generation from NaBH4 hydrolysis

Seong Mo Yun, Tae Hoon Lee, Min Jae Kim, Taek Hyun Oh

kr, be (code pays fourni par la source)

Tailoring Subthreshold Swing in A‐IGZO Thin‐Film Transistors for Amoled Displays: Impact of Conversion Mechanism on Peald Deposition Sequences (Small Methods 8/2024)

Seong Hun Yoon, Jaehun Cho, Iaan Cho, Min Jae Kim et autres

Inside Front Cover In article number 2301185, Shong, Jeong, and co-workers explore controlling the gate swing in amorphous IGZO thin-film transistors using a plasma-enhanced atomic layer deposition. The conversion mechanism in the deposition sequence of In-Zn-Ga allows the controllable gate swing value. …

kr, us (code pays fourni par la source)

Improvement in Performance and Stability of PbS QD/IGZO Phototransistors Through the Introduction of Ga2O3 Film for Broadband Sensor Applications

Yong Jun Jeong, Gwang‐Bok Kim, Min Jae Kim, Jinwook Oh et autres

The development of broadband photosensors has become crucial in various fields. Indium–gallium–zinc oxide (IGZO, In:Ga:Zn = 1:1:1) phototransistors with PbS quantum dots (QDs) have shown promising features for such sensors, such as reasonable mobility, low leakage current, good photosensitivity, and low-cost fabrication. …

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High-Performance and Low-Noise Trantenna Sub-THz Imager With Low-Impedance Analog Buffers and Reset Switch

Sang Hyo Ahn, Min Jae Kim, Myoung Kim, Yoo Bin Song et autres

We demonstrate a high-performance and low-noise single-chip sub-terahertz (THz) imager array by integrating ground (gnd)-out trantenna (transistor-antenna) with a reset switch, analog buffer, multiplexer, and preamplifier using 65-nm CMOS technology. The channel charge asymmetry of sub-THz pixel device is enhanced with ac-gnd …

kr (code pays fourni par la source)

Strong Immunity to Drain-Induced Barrier Lowering in ALD-Grown Preferentially Oriented Indium Gallium Oxide Transistors

Gwang‐Bok Kim, Taikyu Kim, Seon Woong Bang, Jae Seok Hur et autres

Drain-induced barrier lowering (DIBL) is one of the most critical obstacles degrading the reliability of integrated circuits based on miniaturized transistors. Here, the effect of a crystallographic structure change in InGaO [indium gallium oxide (IGO)] thin-films on the DIBL was investigated. Preferentially …

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Double-gate structure enabling remote Coulomb scattering-free transport in atomic-layer-deposited IGO thin-film transistors with HfO2 gate dielectric through insertion of SiO2 interlayer

Cheol Hee Choi, Taikyu Kim, Min Jae Kim, Gwang‐Bok Kim et autres

Abstract In this paper, high-performance indium gallium oxide (IGO) thin-film transistor (TFT) with a double-gate (DG) structure was developed using an atomic layer deposition route. The device consisting of 10-nm-thick IGO channel and 2/48-nm-thick SiO2/HfO2 dielectric was designed to be suitable for …

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Tailoring Subthreshold Swing in A‐IGZO Thin‐Film Transistors for Amoled Displays: Impact of Conversion Mechanism on Peald Deposition Sequences

Seong Hun Yoon, Jaehun Cho, Iaan Cho, Min Jae Kim et autres

Abstract Amorphous IGZO (a‐IGZO) thin‐film transistors (TFTs) are standard backplane electronics to power active‐matrix organic light‐emitting diode (AMOLED) televisions due to their high carrier mobility and negligible low leakage characteristics. Despite their advantages, limitations in color depth arise from a steep subthreshold …

kr, us (code pays fourni par la source)

Facile Preparation of Phosphorous-Doped Graphene Quantum Dots/Bismuth Iron Vanadate Composite as Bifunctional Electrocatalysts for Water Splitting

Beena Mol Babu, Min Jae Kim, Tata Sanjay Kanna Sharma, Won Mook Choi

kr (code pays fourni par la source)