Jong Uk Bae

Sub-Coercive Analog Conductance Modulation from Distributed Energy Barriers in Semicrystalline Ferroelectric Polymer Transistors

Min Geun Yun, Taeho Lee, Sang Min Yu, Jong Uk Bae et autres

Ferroelectric switching is understood as a nucleation-limited process, in which polarization domains switch abruptly once the applied electric field exceeds a well-defined coercive field (Ec). However, the macroscopic Ec is an incomplete descriptor in semicrystalline ferroelectric polymers, where continuous polarization evolution can …

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CCDC 2492797: Experimental Crystal Structure Determination

Jong Uk Bae, Phil-Sik Kim, Jong Min Na, So Won Youn

An entry from the Cambridge Structural Database, the world’s repository for small molecule crystal structures. The entry contains experimental data from a crystal diffraction study. The deposited dataset for this entry is freely available from the CCDC and typically includes 3D coordinates, …

Analysis of physical mechanisms for channel-length-dependent PBTS reliability in SA TG coplanar IGZO TFTs

Chae-Eun Oh, Hyeon-Woo Lee, Chan-Yong Jeong, Jaeman Jang et autres

Abstract This study investigates the physical mechanisms for channel-length-dependent positive bias temperature stress (PBTS) reliability in self-aligned top-gate (SA TG) coplanar indium-gallium-zinc oxide (IGZO) thin-film transistors (TFTs). We fabricated devices with channel lengths of 3 µm, 12 µm, and 20 µm and …

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Tailoring Subthreshold Swing in A‐IGZO Thin‐Film Transistors for Amoled Displays: Impact of Conversion Mechanism on Peald Deposition Sequences (Small Methods 8/2024)

Seong Hun Yoon, Jaehun Cho, Iaan Cho, Min Jae Kim et autres

Inside Front Cover In article number 2301185, Shong, Jeong, and co-workers explore controlling the gate swing in amorphous IGZO thin-film transistors using a plasma-enhanced atomic layer deposition. The conversion mechanism in the deposition sequence of In-Zn-Ga allows the controllable gate swing value. …

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14‐3: Late‐News Paper: Channel Etched Coplanar TFTs for Applying a‐IGZO to High‐resolution and IT Applications

Heung Jo Lee, Pil Sang Yun, Jong Uk Bae, Yoo Seok Park et autres

Self‐aligned a‐IGZO coplanar TFTs have high mobility, excellent large‐area uniformity, and are structurally free of parasitic caps. Accordingly, it is being adopted and mass‐produced as the backplane of OLED TV. Currently, the scope of application of OLED displays using oxide TFT backplanes …

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97‐3: Late‐News Paper: Enhanced IGZO TFT Performance with Atomic Layer Deposition Parameter Optimization for Large OLED Displays

Heung Jo Lee, Pil Sang Yun, Jong Uk Bae, Yoo Seok Park et autres

In this comprehensive study, we rigorously evaluated the applicability of amorphous indium gallium zinc oxide (a‐IGZO) thin films synthesized using atomic layer deposition (ALD) technology in the field of large‐area organic light‐emitting diode (OLED) TVs. The key term to display production is …

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97‐2: Late‐News Paper: Development of High‐Mobility Indium‐rich IGZO TFT Device for IT OLED Display

Hyunmin Cho, Chang-Il Ryoo, Pilsang Yun, Jong Uk Bae et autres

High‐end MNT, NBPC OLED displays require high resolution and high‐speed driving characteristics. In addition, as an OLED backplane, a high mobility and excellent reliability characteristics of TFT are required. We have developed high mobility devices by using Indium (In‐) rich a‐IGZO. In …

Floating body effect in indium–gallium–zinc–oxide (IGZO) thin-film transistor (TFT)

Jingyu Park, Seungwon Go, Woojun Chae, Chang Il Ryoo et autres

Abstract In this paper, the floating body effect (FBE) in indium-gallium-zinc-oxide (IGZO) thin-film transistor (TFT) and the mechanism of device failure caused by that are reported for the first time. If the toggle AC pulses are applied to the gate and drain …

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Tailoring Subthreshold Swing in A‐IGZO Thin‐Film Transistors for Amoled Displays: Impact of Conversion Mechanism on Peald Deposition Sequences

Seong Hun Yoon, Jaehun Cho, Iaan Cho, Min Jae Kim et autres

Abstract Amorphous IGZO (a‐IGZO) thin‐film transistors (TFTs) are standard backplane electronics to power active‐matrix organic light‐emitting diode (AMOLED) televisions due to their high carrier mobility and negligible low leakage characteristics. Despite their advantages, limitations in color depth arise from a steep subthreshold …

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Lifetime estimation of thin-film transistors in organic emitting diode display panels with compensation

Jingyu Park, Sungju Choi, Changwook Kim, Hong‐Jae Shin et autres

Oxide semiconductor thin-film transistors (TFTs) are used in the pixel array and gate driver circuits of organic light emitting diode (OLED) display panels. Long-term reliability characteristics of the TFTs are a barometer of the lifetime of OLED display panels. The long-term reliability …

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Current Boosting of Self‐Aligned Top‐Gate Amorphous InGaZnO Thin‐Film Transistors under Driving Conditions

Jingyu Park, Sungju Choi, Changwook Kim, Hong‐Jae Shin et autres

Abstract Oxide semiconductor transistors control the brightness and color of organic light‐emitting diode (OLED) displays in large‐screen televisions to portable telecommunications devices. Oxide semiconductor thin‐film transistors under driving conditions are required to maintain a steady current through the OLED for constant illuminance. …

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Analysis of Drain-Induced Barrier Lowering in InGaZnO Thin-Film Transistors

Tae Jun Yang, Je-Hyuk Kim, Chang II Ryoo, Seung Joo Myoung et autres

Characterization of short-channel amorphous indium gallium zinc oxide (InGaZnO) (a-IGZO) thin-film transistors (TFTs) has been a crucial issue to realize higher resolution display and heterogeneous integration with complementary metal–oxide–semiconductor (CMOS) technology. In this work, the drain-induced barrier lowering (DIBL) of the a-IGZO …

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