Achieving High Field-Effect Mobility Exceeding 90 cm 2 /Vs in a -IGZTO Transistors With Excellent Reliability

Le résumé fourni par la source

In this letter, amorphous indium-gallium-zinc-tin oxide (${a}$-IGZTO) thin-film transistors (TFTs) were characterized with a bottom gate structure, where a single target with three cation composition ratios were used to deposit the a-IGZTO channel layer. Remarkably,${a}$-In$_{{0.60}}$Ga$_{{0.14}}$Zn$_{{0.20}}$Sn$_{{0.06}}\text{O}$TFTs exhibited exceptional performance, featuring a significantly high field-effect mobility of 90.2 cm2/Vs, a low subthreshold swing of 0.10 V/decade, a threshold voltage (${V} _{\text {TH}}$) of −0.40 V, and an${I} _{\text {ON/OFF}}$ratio of$3\times 10^{{8}}$. Furthermore, the TFTs demonstrated excellent bias temperature stress (BTS) reliability, with minimal variations in${V} _{\text {TH}}$($\Delta {V}_{\text {TH}}$) less than ±0.08 V under negative and positive bias temperature stress at 60 °C for 1 hour. The impressive performance and reliability observed in these TFTs can be attributed to the synergistic percolation of In$^{\text {3+}}$and Sn$^{\text {4+}}$and the beneficial hydrogen-doping effect near Sn cations.

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