97‐3: Late‐News Paper: Enhanced IGZO TFT Performance with Atomic Layer Deposition Parameter Optimization for Large OLED Displays

Le résumé fourni par la source

In this comprehensive study, we rigorously evaluated the applicability of amorphous indium gallium zinc oxide (a‐IGZO) thin films synthesized using atomic layer deposition (ALD) technology in the field of large‐area organic light‐emitting diode (OLED) TVs. The key term to display production is the distribution of device characteristics, and maintaining uniformity can improve productivity yield and product quality. The purpose of this paper is to present guidelines for early application in industry through the process variable exploration results of ALD deposition equipment. The process parameters studied are process pressure and oxygen partial pressure (PO 2 ). We have secured a method to secure device characteristics suitable for display technology through the correlation between a‐IGZO thin film characteristics and device characteristics through corresponding parameters. Our empirical data strongly demonstrate that the threshold voltage (V th ) stabilizes near 0.0 V and consistently achieves device mobility exceeding 15 cm 2 /Vs. In particular, this study shows that the variability of the Vth characteristic, which is limited to a narrow range of less than ±0.1V, is greatly reduced, and the mobility dispersion is also greatly reduced to less than ±1cm 2 /Vs. A deeper analytical exploration revealed that the pivotal factors affecting device performance are closely related to oxygen vacancies (V o ) and their dynamic interactions with oxygen molecules. These results will improve the uniformity of device characteristics, and it is believed that the introduction of ALD technology into future display technology will demonstrate improvements in the performance and quality of display products.

Ce résumé expose les affirmations des auteurs. BNTIC ne l’interprète pas comme une validation indépendante des résultats.