Danyang Chen

Epitaxial growth of superconducting TiN films by atomic layer deposition

Zhipeng Xue, Rongjing Zhai, Danyang Chen, Jun Luo et autres

Epitaxial titanium nitride (TiN) thin films are attractive for electronic and superconducting devices, as their structural perfection critically influences electrical transport and interfacial properties. Although epitaxial TiN is commonly grown by physical vapor deposition (PVD) at elevated temperatures, low-temperature atomic layer deposition …

cn (code pays fourni par la source)

Toward Efficient End-to-End VEM Processing Using a Unified Agent on GPUs and NPUs

Haowen Xiao, Danyang Chen, Ziqian Guan, Xiangcheng Bao et autres

Traditional volumetric electron microscopy (VEM) workflows fragment stitching, alignment, registration, and reconstruction across separate tools, demanding heavy manual supervision and yielding low throughput and inconsistency. VEM data further suffer from non-linear deformation, section loss, corruption, and illumination drift, while registration is slow …

cn, jp (code pays fourni par la source)

Nonvolatile bidirectional photoresponse in a fully CMOS-compatible FeFET for in-sensor computing

Yuyan Fan, Wei Li, Jianquan Liu, Danyang Chen et autres

While bipolar phototransistors show promise for in-sensor computing, their incompatibility with standard complementary metal–oxide–semiconductor (CMOS) technology has hindered practical integration. In this work, we demonstrate nonvolatile bidirectional photoresponse using a fully CMOS-compatible metal–ferroelectric–metal–insulator–semiconductor ferroelectric field effect transistor with Hf0.5Zr0.5O2 and IGZO materials. …

cn (code pays fourni par la source)

Device-Aware Test for Threshold Voltage Shifting in FeFET

Changhao Wang, Sicong Yuan, Nima Kolahimahmoud, Hanzhi Xun et autres

Ferroelectric Field-Effect Transistors (FeFETs) are promising candidates for non-volatile memory (NVM) technologies, especially in embedded systems and edge computing. However, due to their physical characteristics, FeFETs exhibit unique defects—such as Threshold Voltage Shifting (TVS) caused by trap charges in the oxide layer—that …

it, nl, cn (code pays fourni par la source)

Machine Learning Assisted Process Optimization for High Polarization of Ferroelectric HfxZr1-xO2 Thin Films

Xinrui Ma, Danyang Chen, Zhiyu Lin, Mengwei Si et autres

Ultra-High-κ Hf0.5Zr0.5O2 Capacitors Assisted by Interfacial Layer Engineering

Qiang Gao, Danyang Chen, Lu Wang, Zhiyu Lin et autres

Unveiling the polarization switching pathway through tetragonal phase as a metastable intermediate state in ferroelectric HfxZr1-xO2 thin film

Danyang Chen, Yulong Dong, Tianning Cui, Zhipeng Xue et autres

The polarization switching pathway in HfxZr1-xO2-based ferroelectric thin film is still not well clarified and agreed, limiting the fundamental physical understanding and performance engineering. The key question lies in clarifying the transient intermediate state during the polarization switching of orthorhombic phase. In …

cn (code pays fourni par la source)

A Smart and Highly Porous Hydrogel for Diabetic Wound Healing

Nouf Al Saleh, Jinrong Wang, Danyang Chen, Eman Ageely et autres

Abstract Conventional hydrogels often suffer from poor mechanical strength, limited bioactivity, and uncontrolled therapeutic release, restricting their effectiveness in chronic wound healing. Here, a novel multifunctional hydrogel featuring a dual‐crosslinked network of Poly(N‐isopropylacrylamide) (PNIPAM) and Gum Arabic (GA) designed for advanced diabetic …

sa, cn, Égypte (code pays fourni par la source)

Click conjugation of trivalent mannosyl glycocluster with human serum albumin to generate a cell targeting delivery vehicle

Hui Fang Xu, Danyang Chen, Xi-Le Hu, Guo‐Rong Chen et autres

The exploitation of glycans as targeting agents to construct delivery materials has proved useful for targeted disease diagnosis and therapy. To achieve effective targeting, multivalent glycosides are prepared to enhance avidity with sugar receptors. In this study, we designed and synthesized a …

cn, gb (code pays fourni par la source)

Impact of Channel Material, Interface Quality, and Polarization on Memory Window of Interfacial Layer-Free FeFET With Oxide Semiconductor

Zikang Yao, Danyang Chen, Tianning Cui, Yulong Dong et autres

This study systematically investigates the modulation of the memory window (MW) in interfacial layer (IL)-free and Hfx$Zr_{{1}-{x}}$O2 (HZO)-based ferroelectric field-effect transistors (FeFETs) with oxide channel by engineering oxide semiconductor materials, annealing processes, and polarization in HZO. Our findings reveal that the MW …

cn (code pays fourni par la source)

Hidden structural phase transition assisted ferroelectric domain orientation engineering in Hf0.5Zr0.5O2 films

Yuyan Fan, Shunda Zhang, Zhipeng Xue, Yulong Dong et autres

The polarization of HfO2-based ferroelectrics originates from the metastable orthorhombic phase formed during the tetragonal to monoclinic phase transition and is typically controlled by tuning the phase content. However, another way to control polarization via modulating ferroelectric domain orientations remains underexplored. This …

cn (code pays fourni par la source)

GeSe Nanosheets‐Mediated Local Sonocatalytic Immunosuppression of Rheumatoid Arthritis

Lingting Zeng, Bin Zhao, Danyang Chen, Chao Xia et autres

Abstract The first‐line systemic administration of anti‐rheumatic immunosuppressants unavoidably causes adverse effects such as the increase in the risk of infection. While the emergence of local drug delivery for rheumatoid arthritis (RA) therapy can effectively reduce systemic adverse effects, persistent RA therapy …

cn (code pays fourni par la source)