Pilsang Yun

16‐1: High Performance and Reliable 4F 2 IGZO Vertical Channel Transistor (VCT) for Advanced DRAM Cell and High Resolution Display

Daewon Ha, Pilsang Yun, Yongjin Lee, Min Hee Cho et autres

We demonstrate a highly scalable IGZO vertical channel transistor (VCT) for sub‐10nm DRAM. The device achieves ultralow leakage current (< 0.1 aA/μm) and high ION of 49.5 μA/μm with VT of ‐0.13V at 85°C in sub‐100nm channel length. Comprehensive reliability assessments confirm …

kr (code pays fourni par la source)

Enhancing the 400 °C Forming-Gas Annealing Tolerance of Oxide-Semiconductor TFTs via Oxygen Postmetallization Annealing

Yu-Hsin Kuo, Shin Muramoto, Taeyoung Song, Sanghyun Kang et autres

us, kr (code pays fourni par la source)

In-Situ Surface Energy Engineering for ALD-Derived Highly Reliable Top Gate In 2 O 3 Thin-Film Transistors

Jeong Eun Oh, Cheol Hee Choi, Taikyu Kim, Seong Hun Yoon et autres

This study investigates the effects ofin-situsurface energy engineering applied prior to the deposition of the top gate dielectric on the electrical performance of In2O3TFTs. O2plasma treatment effectively reduces the interfacial trap density at the In2O3/gate dielectric interface, enhancing the overall device performance. …

kr, us (code pays fourni par la source)

97‐2: Late‐News Paper: Development of High‐Mobility Indium‐rich IGZO TFT Device for IT OLED Display

Hyunmin Cho, Chang-Il Ryoo, Pilsang Yun, Jong Uk Bae et autres

High‐end MNT, NBPC OLED displays require high resolution and high‐speed driving characteristics. In addition, as an OLED backplane, a high mobility and excellent reliability characteristics of TFT are required. We have developed high mobility devices by using Indium (In‐) rich a‐IGZO. In …

Improvement of the stability under high voltage and high temperature stress by using nitrogen doped IGZO TFTs

In-Tak Cho, Jiyong Noh, Pilsang Yun, Jaeman Jang et autres

kr (code pays fourni par la source)

Enhancing reliability of amorphous In-Ga-Zn-O thin film transistors by nitrogen doping

Taehoon Sung, Kyung Park, Jong Heon Kim, Hyun Woo Park et autres

kr (code pays fourni par la source)

High mobility oxide TFT for OLED pixel circuits

Jong Uk Bae, Ju Heyuck Baeck, Pilsang Yun, Dae Hwan Kim et autres

High mobility oxide TFT has been proposed for OLED panel integrated with scan driver and compensation circuit in pixel. The oxide TFTs on PI substrate has been developed to have 50 cm2/V-sec of mobility and less than 0.5V of range in threshold …

Prospects of oxide TFTs approaching LTPS

Kwon‐Shik Park, Saeroonter Oh, Pilsang Yun, Jong Uk Bae et autres

Oxide TFTs are becoming the mainstream backplane technology for high-resolution large screen displays, while LTPS TFTs are mostly used for high-end portable smart devices. Recent developments in oxide TFTs show high mobility exceeding 50 cm2/V·s, good stability characteristics comparable to LTPS, and …

Microstructure analysis and electrical properties of Cu-Mn electrode for back-channel etching a-IGZO TFT

Pilsang Yun, Junichi Koike

ca (code pays fourni par la source)

P‐33: Cu‐Mn Electrodes for a‐Si TFT and Its Electrical Characteristics

Junichi Koike, Kazuhiko Hirota, Mayumi Naito, Pilsang Yun et autres

Abstract Cu‐Mn alloy was used for electrode materials for amorphous Si TFT. The gate electrode showed a good adhesion to glass and low resistivity. The source/drain electrodes showed a good diffusion barrier property, Ohmic contact, and a low contact resistivity. TFT structure …

jp (code pays fourni par la source)