Yafen Yang

Thickness-Dependent Magnetic Properties and Domain Evolution in Fe3GaTe2 Films Grown by Molecular Beam Epitaxy

Liang Zha, X Y Sun, Wuyang Tan, Yafen Yang et autres

We demonstrate the molecular beam epitaxy growth of two-dimensional van der Waals ferromagnet Fe3GaTe2 films with precisely controlled thicknesses down to a single unit cell. Magneto-optical Kerr effect microscopy measurements reveal robust room-temperature ferromagnetism with perpendicular magnetic anisotropy persisting across all thicknesses, …

cn, Rwanda (code pays fourni par la source)

Market Efficiency in China’s Provincial Electricity Spot Markets: Evidence from Shandong, Shanxi and Guangdong

naifu zhang, Hang Xu, Yafen Yang

Assessing electricity market efficiency is important for power market reform and the development of sustainable power systems. Efficient prices can improve resource allocation and provide better signals for system operation, system flexibility and low-carbon transition. Against this background, this study examines the …

cn (code pays fourni par la source)

Demonstration and Quantification of Trap State Relaxation in SiC MOSFETs

IEEE International Symposium on Reliability Physics 2026, Qingqing Sun, Zhen Wang, Yanghao Wang et autres

We report the first systematic investigation of trap relaxation in SiC MOSFETs. Wafer-level amplifier testing and pulsed I-V characterization demonstrate impacts from circuit to device. Modified three-terminal charge pumping measurements (T-CP) and Constant-capacitance deep-level transient spectroscopy (CC-DLTS) pinpoint deep-level traps, with first-principles …

cn (code pays fourni par la source)

A Novel Shallow-Trench Structure SiC power MOSFET for Trade-off Among Performance, Reliability and Process Complexity

Yanghao Wang, Zi Wang, Jingjing Tan, Peng Liao et autres

This paper presents a novel silicon carbide power MOSFET featuring a JFET shallow-trench structure (ST-MOSFET). By introducing a shallow trench etch within the JFET region of a conventional planar device, an additional gate oxide capacitor structure is formed, which effectively reduces the …

cn (code pays fourni par la source)

Comparative Analysis of Core and IO N-FinFET Devices Degradation under Hot Carrier Injection

Jianbin Guo, Yanghao Wang, Xinru Chen, Zi Wang et autres

In this study, different devices (Core_SVT, Core_ULVT, and IO) of 14nm nodes n-FinFETs are tested for degradation analysis under hot carrier injection (HCI). Various parameters related to their degradation are extracted and analyzed. In this way, the types and distributions of traps …

cn (code pays fourni par la source)

Impact of Oxide Diffusion Space Effect on 14-nm FinFET Performance and Layout-Driven Optimization for Advanced Digital Circuits

Yafen Yang, Jianbin Guo, Tianyang Feng, David Wei Zhang et autres

With the continuous scaling down of the feature size, the effect of shallow trench isolation (STI) on integrated circuit (IC) performance has become increasingly critical. This study pioneers the systematic investigation of oxide diffusion (OD) space effect (OSE) in 14nm fin field-effect …

cn (code pays fourni par la source)

Temperature-Dependent Reverse-Recovery Behavior Analysis and Circuit-Level Mitigation of Superjunction MOSFETs

Wenrong Cui, Peng Liao, Yanghao Wang, Jianbin Guo et autres

This study explores the temperature dependence of reverse-recovery behavior in superjunction metal-oxide-semiconductor field-effect-transistors (MOSFETs) using experiments and Technology Computer-Aided Design (TCAD) simulations. Results show that at 145 °C, switching failure occurs due to severe reverse-recovery degradation. The main cause is the temperature-induced …

cn (code pays fourni par la source)

Reducing dynamic power consumption in FinFET library units by cutting redundant SDB gates

Bing Zhang, Hang Xu, Yafen Yang, Jianbin Guo et autres

cn (code pays fourni par la source)

A Novel Hybrid 1T U-MOSFET/TFET Memory Cell with 5-ns Programming, >100-ms Retention, and >109 Endurance Cycles

Hang Xu, Jianbin Guo, Peng Liao, Yanghao Wang et autres

A High Speed 1T-Memory Based on Standard CMOS Process With Low Power Consumption

Hang Xu, Jianbin Guo, Peng Liao, Yanghao Wang et autres

This study presents a novel 1T-memory with an embedding TFET, which enables programming via band-to-band tunneling (BTBT). Conventional floating gate devices rely mainly on hot carrier injection (HCI) to work. By replacing HCI with BTBT, the required operating voltage, operating time, and …

cn (code pays fourni par la source)

A Copper-Molybdenum Etchant with Wide Process Window, Long Bath Life and High Stability for Thin Film Transistor Liquid Crystal Display Applications

Bing Zhang, Yafen Yang, David Wei Zhang

Conventional etchants for multi-metal/alloy stacked structures often suffer from nonuniform etching, residual layers, or undercutting, failing to meet high-generation production standards. This study presents a stable copper-molybdenum (Cu-Mo) etchant with extended bath life for thin film transistor liquid crystal display (TFT-LCD) applications, …

cn (code pays fourni par la source)

A Highly Integrated 1T CMOS Image Sensor with Enhanced Dynamic Range Performance

Hang Xu, Tianyang Feng, Yafen Yang, Qingqing Sun et autres

Tackling issues of low full well capacity (FWC) and dynamic range (DR) with the process of miniaturization, this paper presents a novel one-transistor (1T) complementary metal- oxide-semiconductor (CMOS) image sensor (CIS) pixel design based on semi-floating gate (SFG) transistor. A backside illumination …

cn (code pays fourni par la source)