Impact of Oxide Diffusion Space Effect on 14-nm FinFET Performance and Layout-Driven Optimization for Advanced Digital Circuits

Le résumé fourni par la source

With the continuous scaling down of the feature size, the effect of shallow trench isolation (STI) on integrated circuit (IC) performance has become increasingly critical. This study pioneers the systematic investigation of oxide diffusion (OD) space effect (OSE) in 14nm fin field-effect transistor (FinFET) technology, proposing novel layout design strategies through isolation mode and structural optimizations to enhance digital unit performance. The results show significant performance improvements in specific digital units: AOI22V1 (72.33%), NAND3V1 (18.94%), MUX2V1 (13.96%), OAI211V1 (6.90%), OR3V2 (6.43%), and XNOR2V1 (6.41%). Alternating Current (AC) characterization reveals that replacing single diffusion breaks (SDB) with double diffusion breaks (DDB) in inverters improves operating frequency by 13% with a 10% dynamic power tradeoff. This work establishes OSE-aware layout design as an essential paradigm for FinFET optimization in advanced technology nodes.

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