Qingqing Sun

A Multifunctional Optoelectronic Memristor Integrating Perception, Computing, and Self-Protective Functionality

Bingqi Cai, Chen Wang, Kun Chen, Qingqing Sun et autres

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CMP-Free Organic Hybrid Bonding Based on Mechanical Interlock Structure via Surface Treatments for 3-D Integration

Jinzhu Li, Qicun Lou, Xinyao Wang, Mingze Ban et autres

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Particle Removal by Surface Protection and Adhesion in the Wafer Dicing Applied to Chip-to-Wafer Hybrid Bonding

Hao Wang, Haoyue Song, Ziyu Liu, Jingxuan Wei et autres

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Reconfigurable Photoelectric Coaxial Fiber-Based Memristors for Neuromorphic Computing

Keying Li, Jieru Song, Le Chen, Y Q He et autres

Bioinspired optoelectronic neuromorphic devices have overcome the limitations of von Neumann architectures. However, most existing devices used in neuromorphic applications are unsuitable for highly flexible, wearable applications. To address this constraint, this work successfully demonstrated a Pt/TiO x /NiO x /Au memristor …

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Synergistic Ni/Al co-doping for enhanced oxidation resistance of SiO2 coatings: Experimental and DFT mechanistic insights

Hao-Jie Yan, Xin-Yu Ye, Xian-Ze Meng, Fei Wang et autres

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Inter-Layer Edge Placement Error Measurement via Backscattered Electron Imaging for Process Window Improvement

Pei Liu, Yuyang Bian, Yu Zhang, Biqiu Liu et autres

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Ni‐Based Metal Cavities‐Mediated Ensemble Effect for Catalytic Hydroconversion of Lignin into Aromatic Monomers

Zhong‐Qiu Liu, Shi‐Qi Jin, Qingqing Sun, Yu‐Jing Liu et autres

An efficient catalytic hydroconversion of lignin into aromatic monomers (AMs) is not only critical for the economic viability of lignin refining, but also reduces dependence on fossil fuels. Nevertheless, current molecular‐level studies on H 2 activation in catalytic hydroconversion of lignin are …

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Comparative Degradation Analysis of 1200 V SiC MOSFETs With Different Gate Structures Under High Drain Bias Stress

Peng Liao, Yanghao Wang, Xiaona Ma, Jianbin Guo et autres

Silicon carbide (SiC) MOSFETs are emerging as key components in next-generation electric vehicle powertrains, owing to their superior material properties. However, under automotive harsh conditions such as load dump or inductive shutdown, the device may experience extreme drain voltage stress near or …

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Polarity-Dependent Electric Field Modulation via Depletion Region Punchthrough in IGBTs Under Gate-Collector Coupled Stress

Dong Zou, Yanghao Wang, Peng Liao, Xi Chen et autres

Insulated gate bipolar transistors (IGBTs) are subjected to critical combined gate-collector voltage stress under extremeoff-state blocking andon-state saturation conditions, presenting serious reliability challenges. This study identifies a severe degradation mode under such conditions and clarifies its physical origin. Electrical measurements and TCAD …

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Statistical Modeling and Prediction of Hot-Carrier Degradation in Nanoscale FinFETs

Xin Xu, Wendi Wei, Xianghui Li, Kun Chen et autres

This work presents a systematic investigation of hot-carrier degradation (HCD) in nanoscale FinFETs using a high-time-resolution HCD_on-the-fly (OTF) characterization technique. Gaussian mixture models (GMMs) combined with the Bayesian information criterion (BIC) are applied to examine the stochastic response of individual traps. By …

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Symmetric Phase-Engineered Hf 1-x Zr x O 2 Enabling Reliable Non-Destructive Memory Readout

Binjie Weng, Ke Xu, Yongkai Liu, Jiajie Yu et autres

In response to the new requirements for memory in the era of big data, artificial intelligence, and the Internet of Things, the issue of destructive readout has become particularly critical for ferroelectric memories. In this work, by precisely controlling the atomic doping …

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Achieving Enhanced Ferroelectricity and Reliability in HZO/ZrO 2 Superlattices With Back-End-of-Line Process

Xingcan Guo, Ke Xu, Ruihong Yuan, Yongkai Liu et autres

Hafnium -based ferroelectric materials have advanced the development of ferroelectric memory devices owing to their excellent CMOS compatibility and tunable properties. However, hafnium-based ferroelectric capacitors typically require high thermal budgets to achieve strong ferroelectricity, which limits their back-end-of-line (BEOL) compatibility. In this …

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