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Profil bibliographique

Peng Liao

Informations fournies par OpenAlex. Research Africa ne déduit ni nationalité, ni poste, ni coordonnées personnelles.

24Publications signalées
99Citations signalées
2Affiliations récentes

Les institutions déclarées

Les domaines associés

Silicon Carbide Semiconductor TechnologiesSemiconductor materials and devicesAtrial Fibrillation Management and OutcomesAdvancements in Semiconductor Devices and Circuit DesignBlood Pressure and Hypertension Studies

Les publications récentes

2026 article OpenAlex

Organic-assisted band engineering enables high-performance self-powered solar-blind 4H-SiC photodetectors

MAOYIN WANG, Zhijian Zhang, ZHEN WANG, JIANBIN GUO et autres

Traditional metal–semiconductor–metal photodetectors (MSM) based on 4H SiC typically have relatively low zero-bias photo-response due to insufficient internal electric fields. To address this issue, we integrated a thermally evaporated p-type organic semiconductor (C8-BTBT) onto an n-type 4H-SiC MSM device to form a …

0 citations Optics Letters
2026 article OpenAlex

Comparative Degradation Analysis of 1200 V SiC MOSFETs With Different Gate Structures Under High Drain Bias Stress

Peng Liao, Yanghao Wang, Xiaona Ma, Jianbin Guo et autres

Silicon carbide (SiC) MOSFETs are emerging as key components in next-generation electric vehicle powertrains, owing to their superior material properties. However, under automotive harsh conditions such as load dump or inductive shutdown, the device may experience extreme drain voltage stress near or …

cn (code pays fourni par la source)

1 citation IEEE Transactions on Electron Devices
2026 article OpenAlex

Polarity-Dependent Electric Field Modulation via Depletion Region Punchthrough in IGBTs Under Gate-Collector Coupled Stress

Dong Zou, Yanghao Wang, Peng Liao, Xi Chen et autres

Insulated gate bipolar transistors (IGBTs) are subjected to critical combined gate-collector voltage stress under extremeoff-state blocking andon-state saturation conditions, presenting serious reliability challenges. This study identifies a severe degradation mode under such conditions and clarifies its physical origin. Electrical measurements and TCAD …

cn (code pays fourni par la source)

0 citations IEEE Transactions on Electron Devices
Accès ouvert 2026 other OpenAlex

Stepwise Breakdown-Induced Degradation Analysis of 1200V SiC MOSFETs with Different Gate Structures

IEEE International Symposium on Reliability Physics 2026, Jianbin Guo, Peng Liao, Qingqing Sun et autres

This work investigates stepwise breakdown–induced degradation in commercial 1200V SiC MOSFETs with planar gate (PG), asymmetric trench (AT), and double trench (DT) structures. Under stepwise drain voltage stress, PG and AT exhibit hard breakdown with distinct pre- and post-breakdown stages, while DT …

cn (code pays fourni par la source)

0 citations Underline Science Inc.
Accès ouvert 2025 article OpenAlex

Administrative-driven hierarchical management of atrial fibrillation on cardiovascular events: a prospective matched cohort study

Mu Chen, Mingzhe Zhao, Yuli Yang, Xin Cui et autres

The administrative-driven hierarchical management (ADHM) refers to the management model that general practitioners act as "voluntary gatekeepers" under local government policy incentives in the non-mandatory hierarchical medical system. However, the impact of ADHM of atrial fibrillation (AF) on cardiovascular events remains unclear. …

cn (code pays fourni par la source)

1 citation Nature Communications
Accès ouvert 2025 article OpenAlex

Differences in HIV-related knowledge, attitudes, and behaviors among men who have sex with men (MSM): comparison between HIV-positive and HIV-negative college students

Zhengwei Jing, Wenhui Chang, Hongyuan Wang, Chao Zhou et autres

Objective This study aimed to compare HIV-related knowledge, attitudes, sexual behaviors, and social networking between MSM college students with and without HIV infection, and to identify associated factors sustaining the high HIV prevalence in this population. Methods A cross-sectional survey was conducted …

cn, gb (code pays fourni par la source)

0 citations Frontiers in Public Health
Accès ouvert 2025 article OpenAlex

Temperature-Dependent Reverse-Recovery Behavior Analysis and Circuit-Level Mitigation of Superjunction MOSFETs

Wenrong Cui, Peng Liao, Yanghao Wang, Jianbin Guo et autres

This study explores the temperature dependence of reverse-recovery behavior in superjunction metal-oxide-semiconductor field-effect-transistors (MOSFETs) using experiments and Technology Computer-Aided Design (TCAD) simulations. Results show that at 145 °C, switching failure occurs due to severe reverse-recovery degradation. The main cause is the temperature-induced …

cn (code pays fourni par la source)

0 citations Micromachines
Accès ouvert 2025 article OpenAlex

Parents’ information needs and perceptions of chatbots regarding self medicating their children

Xueyi Wei, Xiuwen Chen, Liqing Yue, Peng Liao

This qualitative study aimed to better understand parents' information needs and perceptions of chatbots for self-medicating their children and developing chatbots for self-medication. A qualitative study was employed. Semi-structured interviews were conducted from October 2023 to December 2023. The interview data were …

cn, us (code pays fourni par la source)

1 citation Scientific Reports
2025 article OpenAlex

Detailed Degradation Analysis of N-FinFET Under Mixed AC Stress

Peng Liao, Yanghao Wang, Jianbin Guo, Zhijian Zhang et autres

This work presents a comprehensive investigation into the reliability degradation behaviors ofn-type fin field effect transistor (N-FinFET) devices under alternating current (ac) stress conditions, with a particular emphasis on the interplay between positive bias temperature instability (PBTI), hot carrier degradation (HCD), and …

cn (code pays fourni par la source)

3 citations IEEE Transactions on Electron Devices
2025 article OpenAlex

A High Speed 1T-Memory Based on Standard CMOS Process With Low Power Consumption

Hang Xu, Jianbin Guo, Peng Liao, Yanghao Wang et autres

This study presents a novel 1T-memory with an embedding TFET, which enables programming via band-to-band tunneling (BTBT). Conventional floating gate devices rely mainly on hot carrier injection (HCI) to work. By replacing HCI with BTBT, the required operating voltage, operating time, and …

cn (code pays fourni par la source)

1 citation IEEE Electron Device Letters

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