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Profil bibliographique

Qingqing Sun

Informations fournies par OpenAlex. Research Africa ne déduit ni nationalité, ni poste, ni coordonnées personnelles.

4Publications signalées
0Citations signalées
2Affiliations récentes

Les institutions déclarées

Les publications récentes

Accès ouvert 2026 other OpenAlex

RISK: A Framework for GUI Agents in E-commerce Risk Management

Association for Computational Linguistics 2026, Renqi Chen, Shuai Chen, Guo J et autres

E-commerce risk management requires aggregating diverse, deeply embedded web data through multi-step, stateful interactions, which traditional scraping methods and most existing Graphical User Interface (GUI) agents cannot handle. These agents are typically limited to single-step tasks and lack the ability to manage …

cn (code pays fourni par la source)

0 citations Underline Science Inc.
Accès ouvert 2026 other OpenAlex

Pinpointing Traps in FinFETs and NSFETs: An Deep Neural Network-Driven Fast-IV solution

IEEE International Symposium on Reliability Physics 2026, Kun Chen, Ziqiang Huang, Tao Liu et autres

Gate oxide trap–induced performance degradation in stacked GAA NSFETs and FinFETs is systematically analyzed using a Fast-IV technique, revealing distinct trap-induced patterns. A localized trap model is developed and validated in TCAD to simulate position-dependent effects, generating data for training a deep …

cn (code pays fourni par la source)

0 citations Underline Science Inc.
Accès ouvert 2026 other OpenAlex

Stepwise Breakdown-Induced Degradation Analysis of 1200V SiC MOSFETs with Different Gate Structures

IEEE International Symposium on Reliability Physics 2026, Jianbin Guo, Peng Liao, Qingqing Sun et autres

This work investigates stepwise breakdown–induced degradation in commercial 1200V SiC MOSFETs with planar gate (PG), asymmetric trench (AT), and double trench (DT) structures. Under stepwise drain voltage stress, PG and AT exhibit hard breakdown with distinct pre- and post-breakdown stages, while DT …

cn (code pays fourni par la source)

0 citations Underline Science Inc.
Accès ouvert 2026 other OpenAlex

Demonstration and Quantification of Trap State Relaxation in SiC MOSFETs

IEEE International Symposium on Reliability Physics 2026, Qingqing Sun, Zhen Wang, Yanghao Wang et autres

We report the first systematic investigation of trap relaxation in SiC MOSFETs. Wafer-level amplifier testing and pulsed I-V characterization demonstrate impacts from circuit to device. Modified three-terminal charge pumping measurements (T-CP) and Constant-capacitance deep-level transient spectroscopy (CC-DLTS) pinpoint deep-level traps, with first-principles …

cn (code pays fourni par la source)

0 citations Underline Science Inc.

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