Ryoichi Katsumata

Isolation of a Mutant Auxotrophic for L -Alanine and Identification of Three Major Aminotransferases That Synthesize L -Alanine inEscherichia coli

Hiroshi Yoneyama, Hatsuhiro Hori, Sang-Jo LIM, Tatsuya Murata et autres

For Escherichia coli, it has been assumed that L-alanine is synthesized by alanine-valine transaminase (AvtA) in conjunction with an unknown alanine aminotransferase(s). We isolated alanine auxotrophs from a prototrophic double mutant deficient in AvtA and YfbQ, a novel alanine aminotransferase, by chemical …

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Inducible l -Alanine Exporter Encoded by the Novel Gene ygaW ( alaE ) in Escherichia coli

Hatsuhiro Hori, Hiroshi Yoneyama, Ryuta Tobe, Tasuke Ando et autres

We previously isolated a mutant hypersensitive to L-alanyl-L-alanine from a non-L-alanine-metabolizing Escherichia coli strain and found that it lacked an inducible l-alanine export system. Consequently, this mutant showed a significant accumulation of intracellular L-alanine and a reduction in the L-alanine export rate …

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Identification of an l-alanine export system in Escherichia coli and isolation and characterization of export-deficient mutants

Hatsuhiro Hori, Tasuke Ando, Emiko Isogai, Hiroshi Yoneyama et autres

An Escherichia coli strain that exhibits a double auxotrophy for L-alanine and D-alanine was constructed. During growth in the presence of the dipeptide L-alanyl-L-alanine (Ala-Ala), this was fully consumed with concomitant extracellular accumulation of l-alanine in a twofold molar concentration compared with …

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Three Dimensional Flash Memory with Bit Cost Scalable Technology for the Future Ultra High Density Storage Devices (Invited)

H. Aochi, Masahiro Kito, Yoshiaki Fukuzumi, M. Kido et autres

Application of HfSiON to Deep Trench Capacitors of Sub-45nm Node Embedded DRAM

Takao Ando, Noriyuki Sato, S. Hiyama, Takuichi Hirano et autres

Bit Cost Scalable Technology with Punch and Plug Process for Ultra High Density Flash Memory

Hidetake Tanaka, M. Kido, Katsunori Yahashi, M. Oomura et autres

We propose Bit-Cost Scalable (BiCS) technology which realizes a multi-stacked memory array with a few constant critical lithography steps regardless of number of stacked layer to keep a continuous reduction of bit cost. In this technology, whole stack of electrode plate is …

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Antibiotic Resistance in Bacteria and Its Future for Novel Antibiotic Development

Hiroshi Yoneyama, Ryoichi Katsumata

Since the first introduction of the sulfa drugs and penicillin into clinical use, large numbers of antibiotics have been developed and hence contributed to human health. But extensive use of antibiotics has raised a serious public health problem due to multiantibiotic resistant …

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Vertex Channel Field Effect Transistor (VC-FET) Technology Featuring High Performance and Highly Manufacturable Trench Capacitor DRAM

M. Kido, Masahiro Kito, Ryoichi Katsumata, Masaki Kondo et autres

Vertex channel (VC) transistor is applied to both support devices and array transistor of trench capacitor DRAM for the first time. On-current of VC-FETs is much higher than that of conventional planar devices with keeping sufficiently small off-current. They achieve 15% or …

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High density and fully compatible embedded DRAM cell with 45nm CMOS technology (CMOS6)

Tomoya Sanuki, Y. Sogo, A. Oishi, Y. Okayama et autres

For the first time, a deep trench based embedded DRAM cell for 45nm node system on a chip (SoC) applications is presented. We achieve both high data retention time and full compatibility with logic process, while scaling eDRAM cell down to 0.069/spl …

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Vertex channel array transistor (VCAT) featuring sub-60nm high performance and highly manufacturable trench capacitor DRAM

Masahiro Kito, Ryoichi Katsumata, Masaki Kondo, Shoko Ito et autres

Novel vertex channel array transistor (VCAT) fabricated on bulk silicon substrate is applied to trench capacitor DRAM cell for the first time. VCAT utilizes the vertexes as channel between top surface and (111) facet of selective epitaxial Si on active areas. It …

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Bacteriocins Produced by Lactic Acid Bacteria and Their Use for Food Preservation

Hiroshi Yoneyama, Tasuke Ando, Ryoichi Katsumata

Fin-Array-FET on bulk silicon for sub-100 nm trench capacitor DRAM

Ryoichi Katsumata, N. Tsuda, J. Idebuchi, Masaki Kondo et autres

Fin gate array transistor (Fin-Array-FET) fabricated on bulk silicon substrate is applied to the DRAM cell with the deep trench (DT) capacitor. Fin-Array-FET is designed for the 130 nm technology node and beyond by using the 3-D device simulator (HyDeLEOS) and process …

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