Pierre Morin

Recrystallization‐Driven Formation of Single‐Crystalline MoS 2 by Metal‐Organic Chemical Vapor Epitaxy

Iryna Kandybka, Pawan Kumar, Henry Medina Silva, Benjamin Groven et autres

ABSTRACT Single‐crystalline molybdenum disulfide (MoS 2 ) emerges as a leading n‐type channel material for high‐performance electronic devices in the angstrom era of computing. Chemical vapor epitaxy of single‐crystalline MoS 2 relies on sapphire template engineering to impose a preferred crystalline orientation. …

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Novel patterning technology to boost EUV performance

Frédéric Lazzarino, Ru-Gun Liu, Philippe J. Leray, Víctor M. Blanco Carballo et autres

Mental Health and Normality

Pierre Morin

High-Performance Monolayer-2D Stacked Nanosheet FETs with High ION~ 451 μA/μm and ION/IOFF > 109

Fengben Xi, Himanshu Devki Nandan Sharma, Xiangyu Wu, Devin Verreck et autres

In this work, stacked nanosheet FETs with monolayer MoS2 channels are presented. At a channel length of 40 nm, the transistor exhibits a remarkable$\mathrm{I}_{\text{ON}}-451\ \mu \mathrm{A}/\mu \mathrm{m}$at$\mathrm{V}_{\text{DS}}=1\ \mathrm{V}$, achieved with two tiers of monolayer-MoS2channels. The device has a record$\mathrm{I}_{\text{ON}}/\mathrm{I}_{\text{OFF}} > 10^{9}$and a …

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Process-Induced Modulation of Domain Orientations during WS2 Epitaxy by Metal–Organic Chemical Vapor Deposition on Sapphire

Joris Verdin, Henry Medina, Ankit Nalin Mehta, Iryna Kandybka et autres

Single monolayers (MLs) of transition metal dichalcogenides (TMDs) like molybdenum disulfide (MoS 2 ) and tungsten disulfide (WS 2 ) are promising semiconductors for next-generation logic devices, photodetectors, and light-emitting diodes. Applications require industry-relevant deposition techniques that form large monocrystalline TMD domains …

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Top-Gate Stack Engineering Featuring a High-κ Gadolinium Aluminate Interfacial Layer for Field-Effect Transistors Based on Two-Dimensional Transition-Metal Dichalcogenides

Zaoyang Lin, Xiangyu Wu, Dáire J. Cott, Yuanyuan Shi et autres

Atomic layer deposition (ALD) of gate dielectrics on two-dimensional transition-metal dichalcogenides (2D TMDs) is challenging due to their chemically inert surfaces. Although various surface pretreatments can form nucleation sites to facilitate the precursor adsorption, preserving 2D TMDs during the pretreatments and maintaining …

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Advanced characterization of 2D materials using SEM image processing and machine learning

Mohamed Saib, Alain Moussa, Matteo Beggiato, Benjamin Groven et autres

2D materials hold significant potential for enhancing semiconductor device performance. However, their integration necessitates the establishment of a robust metrology that is both accurate and fast, enabling a comprehensive understanding and precise control of their growth processes. Scanning electron microscopy (SEM) ticks …

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Advanced EUV patterning of 2D TMDs for CMOS integration

Vina Faramarzi, Etienne De Poortere, Syam Parayil Venugopalan, Pieter Wöltgens et autres

Field-effect transistors (FETs) with channels of two-dimensional transition metal dichalcogenides (2D TMDs) are expected to extend Moore’s law by extreme scaling of contacted gate pitch (CGP) post silicon-sheet-based complementary FET (CFET) devices. The ultrathin body and fully passivated surface of 2D materials …

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Guiding Principles for the Design of a Chemical Vapor Deposition Process for Highly Crystalline Transition Metal Dichalcogenides

V. V. VORONENKOV, Benjamin Groven, Henry Medina, Pierre Morin et autres

2D transition metal dichalcogenides (TMDs) for advanced logic transistor technologies are deposited by various modifications of the chemical vapor deposition (CVD) method using a wide variety of precursors. Being a major electrical performance limiter, the TMD crystal grain size strongly differs between …

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Wafer-scale characterization for two-dimensional material layers

Alain Moussa, Janusz Bogdanowicz, Benjamin Groven, Pierre Morin et autres

Abstract Logic devices based on two-dimensional (2D) channel materials require highly crystalline monolayers. Despite various laboratory-scale metrology techniques being intensively used to characterize 2D materials on small coupons, the development of in-line and routine characterization of 2D material monolayers grown on 300 …

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Chemical Vapor Deposition of a Single-Crystalline MoS2 Monolayer through Anisotropic 2D Crystal Growth on Stepped Sapphire Surface

Iryna Kandybka, Benjamin Groven, Henry Medina, Stefanie Sergeant et autres

Recently, a step-flow growth mode has been proposed to break the inherent molybdenum disulfide (MoS 2 ) crystal domain bimodality and yield a single-crystalline MoS 2 monolayer on commonly employed sapphire substrates. This work reveals an alternative growth mechanism during the metal–organic …

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Exploring manufacturability of novel 2D channel materials: 300 mm wafer-scale 2D NMOS & PMOS using MoS2, WS2, & WSe2

C. J. Dorow, Tom Schram, Quentin Smets, Kirby Maxey et autres

Rapid progress in fundamental understanding and development of 2D channel materials has yielded significant advances in contact resistance, gate oxide quality, and channel mobility, revealing opportunities for the future of Moore’s Law using highly-scaled 2D CMOS. We now scale up to 300 …

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