Quentin Smets

Selectively Demarcating and Modifying Defects in Two-Dimensional Semiconductors in a 300 mm Fab

Joan M. Redwing, Nicholas Trainor, Pawan Kumar, Benjamin Groven et autres

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Recrystallization‐Driven Formation of Single‐Crystalline MoS 2 by Metal‐Organic Chemical Vapor Epitaxy

Iryna Kandybka, Pawan Kumar, Henry Medina Silva, Benjamin Groven et autres

ABSTRACT Single‐crystalline molybdenum disulfide (MoS 2 ) emerges as a leading n‐type channel material for high‐performance electronic devices in the angstrom era of computing. Chemical vapor epitaxy of single‐crystalline MoS 2 relies on sapphire template engineering to impose a preferred crystalline orientation. …

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High-k scaling for reliability enhancement in 300-mm-integrated WS 2 FETs

Luca Panarella, Stanislav Tyaginov, Quentin Smets, Ben Kaczer et autres

We study the effect of high-k dielectric scaling and annealing treatments on the reliability of 300-mmintegrated WS2field-effect transistors (FETs). Under positive gate bias stress, devices featuring a 1.5nmAlOx/1+3nmHfO2top-gate stack exhibit a significantly lower number of active defects compared to those with 1.5nmAlOx/8+3nmHfO2or …

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Impact of doping and channel inhomogeneities on the stability of industrially fabricated WS2 FETs

Luca Panarella, B. Kaczer, Quentin Smets, Thomas Nuytten et autres

Abstract We report doping-dependent charge trapping in WS 2 field-effect transistors fabricated on a 300 mm wafer. In particular, higher n -type doping–associated with smaller channel areas–correlates with an increased density of active defects. This behavior explains the asymmetric threshold voltage degradation …

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Wafer-scale 2D Material Integrated Device Performance Assessment from Room-temperature Photoluminescence

Dennis Lin, Thomas Nuytten, Albert Minj, Stefanie Sergeant et autres

Stacked 2D Monolayer $\text{MoS}_{2}$ Nanosheet FET with Gate-All-Around and Top Gates Architecture

Fengben Xi, Himanshu Sharma, Xiangyu Wu, Daire Cott et autres

In this work, we present, for the first time, a stacked 2D nanosheet FET featuring a gate-all-around (GAA) and top-gate architecture with monolayer$\text{MoS}_{2}$channels. Additionally, a gate-last process is introduced to scale down nanosheet FETs to a channel width of 40 nm without …

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Observation of fully recoverable leakage behaviour in HfO 2 gate oxide of WS 2 2D FETs induced by local mechanical stress

Kavita Vishwakarma, B. Kaczer, Quentin Smets, Luca Panarella et autres

Abstract A fully recoverable leakage behaviour is observed near the source side of two-dimensional (2D) back gate HfO 2 oxide field-effect transistors (FETs) when subjected to a gigapascal -level mechanical stress (MS) applied locally via a nanoindenter tip. Due to the asymmetrical …

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Impact of doping and channel inhomogeneities on the stability of industrially fabricated WS2 FETs

Luca Panarella, B. Kaczer, Quentin Smets, Thomas Nuytten et autres

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Spontaneous and self-oriented growth during chemical vapor epitaxy of single-crystalline MoS2

Annelies Delabie, Iryna Kandybka, Pawan Kumar, Henry Medina et autres

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Toward characterization and assessment of MoS2 fundamental device properties by photoluminescence

Thomas Nuytten, Albert Minj, Stefanie Sergeant, Quentin Smets et autres

Implications of side contact depth on the Schottky barrier of 2D field-effect transistors

Luca Panarella, Quentin Smets, Devin Verreck, B. Kaczer et autres

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High-Performance Monolayer-2D Stacked Nanosheet FETs with High ION~ 451 μA/μm and ION/IOFF > 109

Fengben Xi, Himanshu Sharma, Xiangyu Wu, Devin Verreck et autres

In this work, stacked nanosheet FETs with monolayer MoS2 channels are presented. At a channel length of 40 nm, the transistor exhibits a remarkable$\mathrm{I}_{\text{ON}}-451\ \mu \mathrm{A}/\mu \mathrm{m}$at$\mathrm{V}_{\text{DS}}=1\ \mathrm{V}$, achieved with two tiers of monolayer-MoS2channels. The device has a record$\mathrm{I}_{\text{ON}}/\mathrm{I}_{\text{OFF}} > 10^{9}$and a …

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