Zaoyang Lin

Threshold Voltage Tuning of Dual-gate MoS2 Transistors Via Engineering of Dielectric Interfacial Layers

Xiangyu Wu, Zaoyang Lin, Pawan Kumar, Dáire J. Cott et autres

Exploring 2D TMD pFET Gate Stack Scalability Towards 1 Nm Electrical Thickness

Tien Dat Ngo, Zaoyang Lin, Chelsey J. Dorow, Xiangyu Wu et autres

We report p-type compatible$\mathbf{W O}_{\mathbf{x}} / \mathbf{H f O}_{\mathbf{2}}$gate stacks for WSe2-based 2D pFET devices. 2D pFET compatible gate stacks are challenging as typical 2D gate stack processes often result in unintentional n-type doping. In this work, we preserve the p-type attributes …

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Enhanced Spectral Tunability by Sub‐10 nm Nanogaps in Graphene‐Metal Hybrid Metasurfaces

Fei Han, Zaoyang Lin, Kacper Pilarczyk, Hongwei Tang et autres

Abstract Electrically tunable graphene‐metal metasurfaces have emerged as a promising platform for precise control of free‐space light propagation. However, their resonance tuning range is limited by fabrication constraints, particularly by the achievable gap size between coupled antennas, which is the parameter that …

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Mid‐Infrared Reflectance Modulator Based on a Graphene CMOS‐Compatible Metasurface

Fei Han, Kacper Pilarczyk, Zaoyang Lin, Conglin Sun et autres

Abstract Optical modulators based on tunable graphene‐metal hybrid metasurfaces have emerged as promising optoelectronic devices due to their high speed and efficient modulation that is controllable through electrostatic gating. In particular, optical modulation in the mid‐infrared region has attracted considerable interest for …

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High-Performance Monolayer-2D Stacked Nanosheet FETs with High ION~ 451 μA/μm and ION/IOFF > 109

Fengben Xi, Himanshu Devki Nandan Sharma, Xiangyu Wu, Devin Verreck et autres

In this work, stacked nanosheet FETs with monolayer MoS2 channels are presented. At a channel length of 40 nm, the transistor exhibits a remarkable$\mathrm{I}_{\text{ON}}-451\ \mu \mathrm{A}/\mu \mathrm{m}$at$\mathrm{V}_{\text{DS}}=1\ \mathrm{V}$, achieved with two tiers of monolayer-MoS2channels. The device has a record$\mathrm{I}_{\text{ON}}/\mathrm{I}_{\text{OFF}} > 10^{9}$and a …

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Impact of monolayer WS2 surface properties on the gate dielectrics formation by atomic layer deposition

Zaoyang Lin, Sven Dekelver, Dáire J. Cott, Benjamin Groven et autres

Two-dimensional transition metal dichalcogenides (2D TMDs), such as MoS2 and WS2, have emerged as promising channel materials for future generation transistors. However, carbon-based surface contaminants pose a significant challenge in the formation of high-quality metal–oxide–semiconductor gate stacks for 2D TMDs. Carbon-based surface …

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High Density 360 /μm Aligned CNT FET with ION >1 mA/μm at -0.5 V VD and 30nm Lch

Xiangyu Wu, Marina Y. Timmermans, Lijun Liu, Fengben Xi et autres

In this work, we demonstrate high performance FETs integrated on high density aligned carbon nanotube (ACNT) arrays and perform statistical analysis. The back-gate pFETs show $I_{\text {on }}\gt 1.2 \mathrm{~mA} / \mu \mathrm{m}, R_{\mathrm{c}} \sim 91 \Omega \cdot \mu \mathrm{~m}$, whereas the …

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Top-Gate Stack Engineering Featuring a High-κ Gadolinium Aluminate Interfacial Layer for Field-Effect Transistors Based on Two-Dimensional Transition-Metal Dichalcogenides

Zaoyang Lin, Xiangyu Wu, Dáire J. Cott, Yuanyuan Shi et autres

Atomic layer deposition (ALD) of gate dielectrics on two-dimensional transition-metal dichalcogenides (2D TMDs) is challenging due to their chemically inert surfaces. Although various surface pretreatments can form nucleation sites to facilitate the precursor adsorption, preserving 2D TMDs during the pretreatments and maintaining …

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Microstructure analysis of silicon nanocrystals formed from silicon rich oxide with high excess silicon: Annealing and doping effects

Keita Nomoto, Terry Chien‐Jen Yang, Anna V. Ceguerra, Tian Zhang et autres

Thin films consisting of silicon nanocrystals fabricated by high silicon content in silicon rich oxide show unique properties of decreasing resistivity and increasing light absorption while maintaining quantum confinement effects. With that said, the effect of the annealing temperature and doping element …

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Accurate analysis of the size distribution and crystallinity of boron doped Si nanocrystals via Raman and PL spectra

Xuguang Jia, Zaoyang Lin, Tian Zhang, Binesh Puthen Veettil et autres

Through fitting of Raman and PL spectra, Si nanocrystal size distributions and Si crystalline fractions are obtained.

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Temperature dependent electroluminescence from all-Si-nanocrystal p-i-n diodes grown on dielectric substrates

Lingfeng Wu, Binesh Puthen Veettil, Keita Nomoto, Xiaojing Hao et autres

In this work, we demonstrate for the first time the electroluminescence (EL) from a mesa isolated p-i-n diode based on silicon nanocrystals (Si NCs) embedded in a SiO2 matrix fabricated on a dielectric substrate. The structure fabricated on a dielectric substrate ensures …

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Numerical calculation of optical phonon decay rate in InN/GaN MQW

H. Xia, Robert John Patterson, Yuan Feng, Tran Smyth et autres

Anharmonic decay of high frequency phonons into low frequency vibrations is a significant energy loss mechanism in semiconductors. In the field of Hot Carrier Solar Cells (HCSC), preventing this decay is of great importance as it helps increase hot carriers lifetime. Phonon …

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