High-Performance Monolayer-2D Stacked Nanosheet FETs with High ION~ 451 μA/μm and ION/IOFF > 109

Le résumé fourni par la source

In this work, stacked nanosheet FETs with monolayer MoS2 channels are presented. At a channel length of 40 nm, the transistor exhibits a remarkable$\mathrm{I}_{\text{ON}}-451\ \mu \mathrm{A}/\mu \mathrm{m}$at$\mathrm{V}_{\text{DS}}=1\ \mathrm{V}$, achieved with two tiers of monolayer-MoS2channels. The device has a record$\mathrm{I}_{\text{ON}}/\mathrm{I}_{\text{OFF}} > 10^{9}$and a yield of 96.59%, which shows good electro-static control in the nanosheet channels. We compare these results to dual gate 2D FETs and show how learnings on the planar devices can be utilized in a gate-all-around case. The successful demonstration of stacked 2D nanosheet FETs with high performance further extends Moore's Law scaling with the future 2D CFETs application.

Ce résumé expose les affirmations des auteurs. BNTIC ne l’interprète pas comme une validation indépendante des résultats.