Ziguang Ma

Relation of V/III ratio of AlN interlayer with the polarity of nitride

Zhaole 兆乐 Su 苏, Yangfeng 阳锋 Li 李, Xiaotao 小涛 Hu 胡, Yimeng 祎萌 Song 宋 et autres

Abstract N-polar GaN film was obtained by using a high-temperature AlN buffer layer. It was found that the polarity could be inverted by a thin low-temperature AlN interlayer with the same V/III ratio as that of the high-temperature AlN layer. Continuing to …

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Analysis of Photo-Generated Carrier Escape in Multiple Quantum Wells

Jiaping Guo, Weiye Liu, Ding Ding, Xinhui Tan et autres

Recent experiments have shown that more than 85% of photo-generated carriers can escape from multiple quantum wells (MQWs) sandwiched between p-type and n-type layers (PIN). In this work, we quantitatively analyze the relationship between the energy of carriers and the height of …

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Enhanced performance of flexible LED by low-temperature annealing

Xiansheng Tang, Wei Zhang, Ziguang Ma, Lili Han et autres

The ohmic contact of n-GaAs having surface treatment was achieved at 300°C. It shows that surface treatment makes the GaAs easier to form an ohmic contact with Ni/Au/Ge/Ni/Au multilayer. Low-temperature annealing was applied to flexible AlGaInP/GaInP multi-quantum well red LED @630 nm …

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Role of low temperature Al(Ga)N interlayers on the polarity and quality control of GaN epitaxy

Zhaole Su, Yangfeng Li, Haibo Yin, Hai Yu et autres

Polarity control is essential for lateral polarity heterostructures. N -polar GaN films were directly grown on high temperature AlN buffer layer . A thin low temperature AlN interlayer could invert the polarity of subsequent GaN layer to Ga-polarity but a low temperature …

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Demonstration of SWIR Silicon-Based Photodetection by Using Thin ITO/Au/Au Nanoparticles/n-Si Structure

Xinxin Li, Zhen Deng, Ziguang Ma, Yang Jiang et autres

Plasmonic photodetection based on the hot-electron generation in nanostructures is a promising strategy for sub-band detection due to the high conversion efficiencies; however, it is plagued with the high dark current. In this paper, we have demonstrated the plasmonic photodetection with dark …

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N-polar GaN Film Epitaxy on Sapphire Substrate without Intentional Nitridation

Zhaole Su, Yangfeng Li, Xiaotao Hu, Yimeng Song et autres

High-temperature nitridation is commonly thought of as a necessary process to obtain N-polar GaN films on a sapphire substrate. In this work, high-quality N-polar GaN films were grown on a vicinal sapphire substrate with a 100 nm high-temperature (HT) AlN buffer layer …

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Experimental Demonstration of the Impact of the Parameters of Floating Guard Ring on Planar InP/InGaAs-Based Avalanche Photodiodes’ Performance and Its Optimization

Junyang Zhang, Xuanzhang Li, Chunhua Du, Yang Jiang et autres

Suppression pre-breakdown in planar separated absorption, grading, charge and multiplication (SAGCM) avalanche photodiodes (APDs) with the help of Floating Guard Ring (FGR) is still a research hotspot. In this paper, a lattice-matched InP/InGaAs-based SAGCM structure is grown by Metal-Organic Chemical Vapor Deposition …

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The flexible LED fabrication by transferring epitaxial film onto PET

Xiansheng Tang, Zhendong Gao, Ziguang Ma, Na Zhang et autres

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Improving the Performance of Solar Cells Under Non-Perpendicular Incidence by Photonic Crystal

Xiansheng Tang, Ziguang Ma, Wenqi Wang, Zhen Deng et autres

Photonic crystal has been proved to manipulate light effectively and improve the performance of solar cells. In this paper, high-performance GaAs-based solar cells with photonic crystal were fabricated to decrease the dependence on the angle of incident light. Photoluminescence (PL) intensity of …

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Effect of Pt Interlayer on Low Resistivity Ohmic Contact to p-InP Layer and Its Optimization

Lili Han, Chunhua Du, Ziguang Ma, Yang Jiang et autres

The contact characteristic between p-InP and metal plays an important role in InP-related optoelectronic and microelectronic device applications. We investigate the low-resistance Au/Pt/Ni and Au/Ni ohmic contacts to p-InP based on the solid phase regrowth principle. The lowest specific contact resistivity of …

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Sphere-shaped SiGe micro/nanostructures with tunable Ge composition and size formed by laser irradiation*

Xinxin Li, Zhen Deng, Sen Wang, Jin‐Biao Liu et autres

SiGe spheres with different diameters are successfully fabricated on a virtual SiGe template using a laser irradiation method. The results from scanning electron microscopy and micro-Raman spectroscopy reveal that the diameter and Ge composition of the SiGe spheres can be well controlled …

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Stripping GaN/InGaN epitaxial films and fabricating vertical GaN-based light-emitting diodes

Xiansheng Tang, Ziguang Ma, Lili Han, Zhen Deng et autres

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