Zhaole Su

Role of low temperature Al(Ga)N interlayers on the polarity and quality control of GaN epitaxy

Zhaole Su, Yangfeng Li, Haibo Yin, Hai Yu et autres

Polarity control is essential for lateral polarity heterostructures. N -polar GaN films were directly grown on high temperature AlN buffer layer . A thin low temperature AlN interlayer could invert the polarity of subsequent GaN layer to Ga-polarity but a low temperature …

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Realizing Single Chip White Light InGaN LED via Dual-Wavelength Multiple Quantum Wells

Yangfeng Li, Cui Liu, Yuli Zhang, Yang Jiang et autres

Dual-wavelength multiple quantum wells (MQWs) have great potential in realizing high quality illumination, monolithic micro light-emitting diode (LED) displays and other related fields. Here, we demonstrate a single chip white light indium gallium nitride (InGaN) LED via the manipulation of the dual-wavelength …

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N-polar GaN Film Epitaxy on Sapphire Substrate without Intentional Nitridation

Zhaole Su, Yangfeng Li, Xiaotao Hu, Yimeng Song et autres

High-temperature nitridation is commonly thought of as a necessary process to obtain N-polar GaN films on a sapphire substrate. In this work, high-quality N-polar GaN films were grown on a vicinal sapphire substrate with a 100 nm high-temperature (HT) AlN buffer layer …

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Two-Step Deposition of an Ultrathin GaN Film on a Monolayer MoS2 Template

Yimeng Song, Yangfeng Li, Yingfeng He, Huiyun Wei et autres

Ultrathin gallium nitride (GaN) application can be profoundly influenced by its quality, especially the issue of amorphous interfacial layers formed on conventional substrates. Herein, we report a two-step deposition of an ultrathin GaN film via the plasma-enhanced atomic layer deposition (PEALD) technique …

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Effect of initial condition on the quality of GaN film and AlGaN/GaN heterojunction grown on flat sapphire substrate with ex-situ sputtered AlN by MOCVD

Zhaole Su, Rui Kong, Xiaotao Hu, Yimeng Song et autres

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The influence of temperature of nitridation and AlN buffer layer on N-polar GaN

Yangfeng Li, Xiaotao Hu, Yimeng Song, Zhaole Su et autres

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Characterization of the N-polar GaN film grown on C-plane sapphire and misoriented C-plane sapphire substrates by MOCVD

Xiaotao Hu, Yimeng Song, Zhaole Su, Haiqiang Jia et autres

Gallium nitride (GaN) thin film of the nitrogen polarity (N-polar) was grown on C-plane sapphire and misoriented C-plane sapphire substrates respectively by metal-organic chemical vapor deposition (MOCVD). The misorientation angle is off-axis from C-plane toward M-plane of the substrates, and the angle …

The role of AlN thickness in MOCVD growth of N-polar GaN

Yangfeng Li, Xiaotao Hu, Yimeng Song, Zhaole Su et autres

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Epitaxy N-polar GaN on vicinal Sapphire substrate by MOCVD

Yangfeng Li, Xiaotao Hu, Yimeng Song, Zhaole Su et autres

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