Relation of V/III ratio of AlN interlayer with the polarity of nitride
Zhaole 兆乐 Su 苏, Yangfeng 阳锋 Li 李, Xiaotao 小涛 Hu 胡, Yimeng 祎萌 Song 宋 et autres
Abstract N-polar GaN film was obtained by using a high-temperature AlN buffer layer. It was found that the polarity could be inverted by a thin low-temperature AlN interlayer with the same V/III ratio as that of the high-temperature AlN layer. Continuing to …
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