Detailed Degradation Analysis of N-FinFET Under Mixed AC Stress

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This work presents a comprehensive investigation into the reliability degradation behaviors ofn-type fin field effect transistor (N-FinFET) devices under alternating current (ac) stress conditions, with a particular emphasis on the interplay between positive bias temperature instability (PBTI), hot carrier degradation (HCD), and OFF-state degradation (OSD). Experiments were conducted on 14 nm FinFETs, employing ac waveforms that emulate realistic inverter switching operations. The results demonstrate that threshold voltage degradation under ac stress is predominantly governed by PBTI, while HCD contributes minimally—likely due to insufficient thermal energy for hot carrier activation at frequencies below 1 MHz. Comparative analyses between actual and simplified ac waveforms—where the latter exclude OSD phases—reveal distinct degradation behaviors. Notably, a peak in threshold voltage degradation rate emerges at 100 kHz under actual ac stress, a phenomenon absent in the simplified case, highlighting the critical role of OSD in ac stress. These findings collectively emphasize the necessity of incorporating both dynamic ac stress profiles and OSD effects into predictive reliability models for scaled FinFET technologies operating in logic-intensive environments with frequent switching activity.

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