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Profil bibliographique

Hongxia Liu

Informations fournies par OpenAlex. Research Africa ne déduit ni nationalité, ni poste, ni coordonnées personnelles.

485Publications signalées
7554Citations signalées
5Affiliations récentes

Les institutions déclarées

Les domaines associés

Semiconductor materials and devicesAdvancements in Semiconductor Devices and Circuit DesignFerroelectric and Negative Capacitance DevicesIntegrated Circuits and Semiconductor Failure AnalysisRadiation Effects in Electronics

Les publications récentes

Accès ouvert 2026 article OpenAlex

An Ag/Al 2 O 3 /Ga 2 O 3 /Pt bilayer memristor with low power consumption for neuromorphic applications

Zhenli Zuo, Hongxia Liu, Ye Yang, Kai Sun et autres

Resistive random-access memory-based in-memory computing offers a route beyond the von Neumann bottleneck, and the ultra-wide-bandgap semiconductor gallium oxide (GaO) is an attractive memristor material owing to its chemical and thermal stability. However, purely electrically driven GaO-based electrochemical metallization (ECM) devices still …

cn (code pays fourni par la source)

0 citations Nanotechnology
Accès ouvert 2026 article OpenAlex

Jujube Peel Pigment-Loaded Thermosensitive Hydrogel with In Vitro Pro-Apoptotic and Antibacterial Activities

Pei Zhang, Qianqian Chen, Shichao Chen, Huixia Guo et autres

Cancer remains a major global health concern, driving the search for safe and effective bioactive compounds from natural sources. Jujube peel red pigment (JP), an anthocyanin-rich extract, has shown preliminary bioactivity, yet its antitumor potential and delivery challenges remain underexplored. This study …

0 citations Gels
Accès ouvert 2026 article OpenAlex

Quantitative mechanism separation of single-event transients in nanosheet transistors via TCAD simulation

D Liu, Hongxia Liu, Junwei Zhao, Chen ZHONG et autres

As process nodes scale to the nanosheet structure, the continuous reduction in device dimensions and the introduction of vertical stacking structures pose new challenges for single-event effect sensitivity. This work uses calibrated TCAD simulations to systematically investigate the effects of four key …

cn (code pays fourni par la source)

0 citations Nanotechnology
Accès ouvert 2026 article OpenAlex

Supratopological Ion‐Coordinated Binder Networks for Durable and Kinetically Efficient Silicon Anodes

Dejian Cheng, Bin Tan, Yong Zeng, Taoying Rao et autres

ABSTRACT The practical deployment of silicon (Si) anodes is limited by coupled mechanical failure and sluggish electrochemical kinetics arising from repeated volume expansion. While polymer binders are critical to electrode integrity, conventional designs often prioritize mechanical strength over ion transport. Here, a …

cn (code pays fourni par la source)

0 citations Small
2026 article OpenAlex

Design of Hydrogels with Dual Asymmetric Structures for Solar-Driven Water Evaporation and Evaporation-Induced Power Generation

MingYang Lou, Qiao You, WeiRong Qin, Yongyue Liang (23809561) et autres

The global challenges of freshwater scarcity and sustainable energy demand drive the development of integrated systems capable of concurrent solar desalination and electricity generation. We present a dual-asymmetric PVA/cellulose/CNT composite hydrogel synthesized via Pickering emulsion templating and freeze–thaw cycling. This design constructs …

cn, us (code pays fourni par la source)

0 citations ACS Applied Polymer Materials
Accès ouvert 2026 article OpenAlex

A Universal Deep Learning Model for Predicting Detection Performance and Single-Event Effects of SPAD Devices

Yilei Chen, Jin Huang, Yuxiang Zeng, Yi Jiang et autres

Single-event effects (SEEs) present a significant challenge to the radiation reliability of integrated circuits. Conventional SEE analysis methods for single-photon avalanche diode (SPAD) devices primarily rely on Sentaurus Technology Computer-Aided Design (TCAD) numerical simulation, which is computationally intensive and time-consuming. In this …

cn (code pays fourni par la source)

0 citations Micromachines
Accès ouvert 2025 article OpenAlex

Multifunctional Phototransistor Based on MoS 2 /Ta 2 NiSe 5 /WSe 2 vdW Heterojunctions with High‐Performance Anti‐Ambipolar Transport

Cong Yan, Hongxia Liu

Abstract The anti‐ambipolar transistors based on van der Waals (vdW) heterojunctions, constructed from 2D materials, exhibit a variety of tunable physical properties, providing a versatile platform for the exploration of novel physical phenomena and the development of diverse electronic and optoelectronic device …

cn (code pays fourni par la source)

0 citations Advanced Optical Materials
Accès ouvert 2025 article OpenAlex

Performance Analysis and Optimization of an InGaAs/GaAsSb Heterojunction Dopingless Tunnel FET with a Heterogate Dielectric

JunJie Huang, Hongxia Liu, Shupeng Chen, Shulong Wang et autres

An InGaAs/GaAsSb heterojunction dopingless Tunnel FET with a heterogate dielectric is proposed and investigated in this work, aiming to extend the advantages of dopingless TFETs in low-power applications. By employing the InGaAs/GaAsSb heterojunction with a quasi-broken gap energy band structure in dopingless …

cn (code pays fourni par la source)

2 citations Micromachines

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