Zhenli Zuo

An Ag/Al 2 O 3 /Ga 2 O 3 /Pt bilayer memristor with low power consumption for neuromorphic applications

Zhenli Zuo, Hongxia Liu, Ye Yang, Kai Sun et autres

Resistive random-access memory-based in-memory computing offers a route beyond the von Neumann bottleneck, and the ultra-wide-bandgap semiconductor gallium oxide (GaO) is an attractive memristor material owing to its chemical and thermal stability. However, purely electrically driven GaO-based electrochemical metallization (ECM) devices still …

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Author response for "An Ag/Al2O3 /Ga2O3 /Pt Bilayer Memristor with Low Power Consumption for Neuromorphic Applications"

Zhenli Zuo, Hongxia Liu, Ye Yang, Kai Sun et autres

Author response for "An Ag/Al2O3 /Ga2O3 /Pt Bilayer Memristor with Low Power Consumption for Neuromorphic Applications"

Zhenli Zuo, Hongxia Liu, Ye Yang, Kai Sun et autres

A voltage-controlled reconfigurable memristor with dual-mode synaptic plasticity for adaptive neuromorphic computing and mechanism analysis

Kai Sun, Hongxia Liu, Ye Yang, Zhenli Zuo

heterostructure, which demonstrates voltage-modulated switching behavior between analog and digital resistance switch (A-RS/D-RS) modes. Low-voltage operation (less than 1 V) achieves A-RS for continuous conductance modulation (emulating synaptic plasticity), while higher voltages (more than 2 V) trigger D-RS for abrupt threshold transitions …

cn (code pays fourni par la source)

An Ag/Al2O3/Ga2O3/Pt Bilayer Memristor with Low Power Consumption for Neuromorphic Applications

Zhenli Zuo, Hongxia Liu, Yang Ye, Kai Sun et autres