Performance Analysis and Optimization of an InGaAs/GaAsSb Heterojunction Dopingless Tunnel FET with a Heterogate Dielectric
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Le résumé fourni par la source
An InGaAs/GaAsSb heterojunction dopingless Tunnel FET with a heterogate dielectric is proposed and investigated in this work, aiming to extend the advantages of dopingless TFETs in low-power applications. By employing the InGaAs/GaAsSb heterojunction with a quasi-broken gap energy band structure in dopingless TFET, the HDL-TFET achieves extremely high band-to-band tunneling efficiency. A dual-electrode structure is adopted to improve carrier distribution, which further enhances tunneling efficiency and increases on-state current (ION). To suppress off-state tunneling, optimize ambipolar current, and reduce parasitic capacitance, a heterogate dielectric structure is introduced. Results show that the HDL-TFET exhibits an ION up to 8.33 × 10−5 A/μm and a steep subthreshold swing (SSavg) of 10.18 mV/dec at a low operating voltage of 0.5 V. It also achieves an off-state current (IOFF) as low as 3.42 × 10−15 A/μm and ION/IOFF ratio up to 2.44 × 1010, with no obvious ambipolar current. Compared with previously reported works, the proposed HDL-TFET demonstrates significant advantages. Additionally, the introduction of the heterogate dielectric and dual-electrode structure significantly improves the RF performance of the device, with a peak transconductance (Gm) of 333 μS/μm, and a peak cutoff frequency (fT) and gain bandwidth product (GBP) up to 64 GHz and 49 GHz, respectively.
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Le contrôle bibliographique ouvert
DOI retrouvé dans Crossref DOI retrouvé ; titre concordant.
- Titre Crossref
- Performance Analysis and Optimization of an InGaAs/GaAsSb Heterojunction Dopingless Tunnel FET with a Heterogate Dielectric
- Date Crossref
- 26/11/2025
- Éditeur
- MDPI AG
- Type
- journal-article
Ce recoupement confirme des métadonnées liées au DOI. Il ne confirme ni la méthode ni les conclusions de l’étude, et il ne compte pas comme une seconde source scientifique indépendante.
Où se fait cette recherche
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Xidian University pays non établi dans la noticeUniversité ou école supérieure
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China Electronic Product Reliability and Environmental Test Institute pays non établi dans la noticeStructure de recherche
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School of Microelectronics Key Laboratory for Wide Band Gap Semiconductor Materials and Devices of Education pays non établi dans la noticeUniversité ou école supérieure
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Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory pays non établi dans la noticeStructure de recherche
Xidian University, China Electronic Product Reliability and Environmental Test Institute et Key Laboratory for Wide Band Gap Semiconductor Materials and Devices of Education — School of Microelectronics, avec 1 autre affiliation.
Une affiliation ne permet pas de déduire la nationalité d’un auteur.