A compact SCR structure with reduced trigger voltage and parasitic capacitance for high-speed I/O ESD protection
Lian-Teng Lin, Shupeng Chen, Ruibo Chen, Zhengwei Zhang et autres
cn (code pays fourni par la source)
Informations fournies par OpenAlex. Research Africa ne déduit ni nationalité, ni poste, ni coordonnées personnelles.
Lian-Teng Lin, Shupeng Chen, Ruibo Chen, Zhengwei Zhang et autres
cn (code pays fourni par la source)
Shupeng Chen, Jie Liu, G Q He, Nana Tang et autres
Background: Cancer poses a major global health challenge, and immunotherapy, known as the third revolution in cancer treatment, has brought new hope to patients. The emerging field of immunometabolism has further enhanced the safety and efficacy of immunotherapy. Over the past two …
cn (code pays fourni par la source)
Hao Yu, Wei Zhou, Hongxia Liu, Shulong Wang et autres
The working environment of electronic devices in the aerospace field is harsh. In order to ensure the reliable application of the SOI FinFET, the total ionizing dose (TID) and hot carrier injecting (HCI) reliability of an SOI FinFET were investigated in this …
cn (code pays fourni par la source)
Suyang Cai, Qilin Xiao, Cheng Tian, Jiachao She et autres
cn (code pays fourni par la source)
Jun‐Jie Zeng, Shupeng Chen, Peng Feng, Yan Zhuge et autres
Fiber reinforced polymer (FRP) bars have been proposed for use in ultra-high performance concrete (UHPC) as the reinforcement to mitigate/avoid the post-peak strain softening of UHPC under tension and to reduce the fiber dosage used in UHPC. The so-formed FRP-reinforced UHPC plates …
cn, au, hk (code pays fourni par la source)
As a new technology in China, remote sensing has gone through different stages including introduction, digestion, absorption and innovation in the process of its spread and application. In the present paper, a review of remote sensing and its application were given.
Jun‐Jie Zeng, Shupeng Chen, Kai-Di Peng, Jian‐Guo Dai
cn, mo, hk (code pays fourni par la source)
Gang Wang, Shulong Wang, Lan Ma, Guosheng Wang et autres
Abstract The tunnel field‐effect transistor (TFET) is considered to be a suitable substitute for metal oxide semiconductor‐field effect transistors in the post‐“Moore's Law” era owing to its low power consumption. However, Si‐TFETs face the drawbacks of low on‐state currents and significant ambipolar …
cn (code pays fourni par la source)
Tao Han, Hongxia Liu, Shupeng Chen, Shulong Wang et autres
A field effect transistor (FET) device of a MoS2/graphene vertical heterostructure material combined with the high carrier mobility of graphene material with a permanent band gap of monolayer MoS2 material, can realize the application of digital circuit. In this paper, the high-quality …
cn (code pays fourni par la source)
Jun‐Jie Zeng, Shupeng Chen, Yan Zhuge, Wan-Yang Gao et autres
cn, au (code pays fourni par la source)
Chong Chen, Hongxia Liu, Shulong Wang, Shupeng Chen
Abstract In this paper, a dielectric modulated double source trench gate tunnel FET (DM-DSTGTFET) based on biosensor is proposed for the detection of biomolecules. DM-DSTGTFET adopts double source and trench gate to enhance the on-state current and to generate bidirectional current. In …
cn (code pays fourni par la source)
Tao Han, Hongxia Liu, Shupeng Chen, Shulong Wang et autres
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