Hwan-Hee Jeong

A Study on Noble Methods to Generate Logo Images Using Generative Network Learning and Sketching

Hwan-Hee Jeong, Gap-Soo Kim, Seungdo Jeong

회사의 로고는 회사의 이미지를 한눈에 파악할 수 있는 가장 효율적인 요소 중 하나이다. 잘 제작된 로고는 지속적으로 회사의 이미지 를 제고하거나 기업의 홍보 및 광고 도구로써 매우 중요한 역할을 부여받는다. 실제로 대부분의 기업이 많은 비용을 투자하여 회사를 대표하는 브랜드 로고를 만들고 있다. …

Substrate Effects on the Electrical Properties in GaN-Based High Electron Mobility Transistors

Sung‐Jae Chang, Kyujun Cho, Sang-Youl Lee, Hwan-Hee Jeong et autres

We report the electrical characteristics of GaN-based high electron mobility transistors (HEMTs) operated on various substrates/films. For the detailed investigation and comparison of the electrical properties of GaN-based HEMTs according to the substrates/films, GaN-based HEMTs were processed using 4-inch sapphire substrates and …

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Damage-Free Plasma Etching to Enhance Performance of AlGaInP-Based Micro-Light Emitting Diode

Sang-Youl Lee, Eunduk Lee, Jihyung Moon, Byoungjun Choi et autres

We investigated the effect of plasma-etching on the electrical and optical performance of lateral AlGaInP-based red micro-LEDs as a function of etching time, where plasma-etched Ag particles were used as masks. For the sample etched for 12 s, around 33% of the …

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Improved Light Output of AlGaInP-Based Micro-Light Emitting Diode Using Distributed Bragg Reflector

Sang-Youl Lee, Ji Hyung Moon, Yong-Tae Moon, Chung Song Kim et autres

We investigated how the performance and reliability of AlGaInP-based red (620 nm) micro-light-emitting diodes (micro-LEDs) (25 × 17 μm2) were influenced by the use of n-AlInP ohmic layer and distributed Bragg reflector (DBR). The AlGaAs-based DBR showed reflectivity of 94.9% at 622 …

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Light extraction enhancement of AlGaN-based vertical type deep-ultraviolet light-emitting-diodes by using highly reflective ITO/Al electrode and surface roughening

Youn Joon Sung, Min‐Sung Kim, Hwankyo Kim, Sunghan Choi et autres

AlGaN-based vertical type high power ultraviolet-C light emitting diodes (UV-C LEDs), which have a Ga-face n-contact structure, were fabricated on a LED epilayer transferred to a carrier wafer through a laser lift-off (LLO) process. A significant light extraction enhancement of the vertical …

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Light output performance of red AlGaInP-based light emitting diodes with different chip geometries and structures

Jeong-Tak Oh, Sang-Youl Lee, Yong-Tae Moon, Ji Hyung Moon et autres

than the LED with 20 pairs of MQWs. These results show that the optimization of the number of QWs is needed to obtain maximum EQE of micro-LEDs.

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Effect of Phosphor Layer Size on the Optical and Thermal Properties of Chip Scale Packaged Light-Emitting Diodes

Gyu Hyeong Bak, Sun Woo Oh, Hyun Ho Sung, Won Jung Kim et autres

Light-emitting diodes (LEDs) have been widely applied for backlight unit for displays, general lighting, and automotive illumination because they have a high light efficiency and long life time, and are environmentally friendly. These diverse applications require smaller and slim LED chip scale …

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Controlling the defect density to improve the output power of InGaN/GaN-based vertical light-emitting diodes by using substrates patterned with SiO2lenses

Daesung Kang, Da-Som Kim, Sun‐Kyung Kim, Ki‐Young Song et autres

In this study, we investigated the effect of SiO2 lenses on the output power of InGaN/GaN-based vertical light-emitting diodes (VLEDs; wavelength = 445 nm) and compared the results to those of reference VLEDs without the SiO2 lenses (planar samples). Arrays of SiO2 …

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Comparison of the Performance of Lateral and Vertical InGaN/GaN-Based Light-Emitting Diodes with GaN and AlN Nucleation Layers

Daesung Kang, Myunghoon Jung, Eunsil Choi, Ki‐Young Song et autres

We investigated the effects of in situ GaN and sputtered AlN nucleation layers on the output power of GaN-based blue (445 nm) LEDs on patterned sapphire substrate (PSS) and planar sapphire substrates. Both the PSS LEDs and planar LEDs showed the same …

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Reducing forward bias voltage of InGaN/GaN-based light emitting diodes by using (In)GaN contact layer

Daesung Kang, Younghun Han, Dong‐Hun Kang, Hyunai Kyoung et autres

Reducing forward bias voltage of InGaN/GaN-based light emitting diodes by using (In)GaN contact layer, Kang, Daesung, Han, Younghun, Kang, Donghun, Kyoung, Hyunai, Jeong, Hwanhee, Song, June-O, Kim, Dae-Hyun, Seong, Tae-Yeon

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Improving output power performance of InGaN-based light-emitting diodes by employing step-down indium contents

Daesung Kang, Taejoon Kim, Ki‐Young Song, Jihyun Back et autres

We investigated the effect of step-down indium content in InGaN quantum wells (QWs) on the output efficiency of fully packaged InGaN-based light-emitting diodes (LEDs). Both the reference and step-down LED chips give maximum external quantum efficiencies (EQE) of 54.65 and 54.99% at …

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Optimizing n-type contact design and chip size for high-performance indium gallium nitride/gallium nitride-based thin-film vertical light-emitting diode

Jaecheon Han, Daehee Lee, Boram Jin, Hwan-Hee Jeong et autres

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