Hwankyo Kim

Enhancing the light extraction of AlGaN-based vertical type deep-ultraviolet light-emitting-diodes with an internal reflector

Youn Joon Sung, Young-Gyeong Lee, Hwankyo Kim, Hyun-Soo Lim et autres

AlGaN-based UV-C vertical LEDs comprising Ga-face n -contact and an internal reflector are reported here. Inside the chip, the internal reflector is designed as a hexagonal shape surrounding a circular n -electrode. The use of SiO 2 /Al reflectors on the etched …

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Light extraction enhancement of AlGaN-based vertical type deep-ultraviolet light-emitting-diodes by using highly reflective ITO/Al electrode and surface roughening

Youn Joon Sung, Sung Kwon Kim, Hwankyo Kim, Sunghan Choi et autres

AlGaN-based vertical type high power ultraviolet-C light emitting diodes (UV-C LEDs), which have a Ga-face n-contact structure, were fabricated on a LED epilayer transferred to a carrier wafer through a laser lift-off (LLO) process. A significant light extraction enhancement of the vertical …

kr (code pays fourni par la source)

Cr/ITO semi-transparent n-type electrode for high-efficiency AlGaN/InGaN-based near ultraviolet light-emitting diodes

Hwankyo Kim, Daehyun Kim, Tae‐Yeon Seong

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