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Profil bibliographique

Kota Imanishi

Informations fournies par OpenAlex. Research Africa ne déduit ni nationalité, ni poste, ni coordonnées personnelles.

11Publications signalées
4Citations signalées
1Affiliations récentes

Les institutions déclarées

Les domaines associés

Thin-Film Transistor TechnologiesGa2O3 and related materialsSemiconductor materials and devicesTransition Metal Oxide NanomaterialsMagneto-Optical Properties and Applications

Les publications récentes

Accès ouvert 2025 article OpenAlex

Early Brain Metastasis despite Pathological Complete Response after Radical Resection for Esophageal Cancer following Chemotherapy and Pembrolizumab

Tetsuhiro Urashima, Yusaku Tanaka, Kota Imanishi, Sachika Kinoshita et autres

INTRODUCTION: Brain metastasis from esophageal cancer is rare. In particular, recurrent brain metastasis following multimodal treatment, such as preoperative chemotherapy and surgical resection, is extremely uncommon.We present a case of early brain metastasis from esophageal cancer despite achieving pathological complete response (pCR). …

jp (code pays fourni par la source)

0 citations Surgical Case Reports
2022 article OpenAlex

[A Case of Laparoscopic Total Gastrectomy for Juvenile Polyposis of Stomach with Synchronous Multiple Intramucosal Carcinomas].

Jun Sakai, Hidetaka Andrew Ono, Kana Otsubo, Yukio Tsuura et autres

The patient was a 57-year-old woman. She was referred to our hospital because severe anemia. Upper gastrointestinal endoscopy revealed polyposis throughout the stomach and lobulated polyps in cardia, greater curve of middle body of the stomach, and angulus. Colonoscopy and small bowel …

jp (code pays fourni par la source)

0 citations PubMed
2020 article OpenAlex

Analysis of Carrier Mobility in Amorphous Metal-Oxide Semiconductor Thin-Film Transistor using Hall Effect

Kota Imanishi, Tokiyoshi Matsuda, Mutsumi Kimura

Carrier mobility in an amorphous metal-oxide semiconductor (AOS) thin-film transistor (TFT) was analyzed using the Hall effect. First, an amorphous Ga-Sn-O (a-GTO) TFT and that with four electrodes arranged in a square shape are fabricated.Next, a transistor characteristic of the a-GTO TFT …

jp (code pays fourni par la source)

4 citations IEEE Electron Device Letters
2018 conference-paper OpenAlex

Evaluation of Ga-Sn-O Thermoelectric Device

Yoku Ikeguchi, Kota Imanishi, Ryuki Nomura, Mutsumi Kimura et autres

A thermoelectric conversion element is a device for converting thermal energy into electric energy. Many thermoelectric materials are toxic and contain rare-metals. Thus we have evaluated thermoelectric effect of Ga-Sn-O (GTO) that is rare-metal free and less toxic. Moreover, how the annealing …

jp (code pays fourni par la source)

0 citations
2017 conference-paper OpenAlex

Magnetoresistance effect of Ga-Sn-O film deposited using mist chemical vapor deposition

Ryuki Nomura, Aska Fukawa, Kota Imanishi, Hiroki Fukushima et autres

We have evaluated magnetoresistance (MR)effect of a Ga-Sn-O (GTO) film deposited using mist chemical vapor deposition (CVD). It is found that the as-deposited film shows negative MR effect, whereas the annealed film shows positive MR effect. We assume that this phenomenon occurs …

jp (code pays fourni par la source)

0 citations

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