N. Barrett

X-ray photoelectron spectroscopy study of gate/ferroelectric interface chemistry in metal–ferroelectric–insulator–semiconductor stacks

Tom Iung, Lucía Pérez Ramírez, C. Lubin, I. Bottala-Gambetta et autres

Front-end-of-the-line thermal budgets used for complementary metal oxide semiconductor integration can strongly modify the gate/ferroelectric interface in metal–ferroelectric–insulator–semiconductor (MFIS) ferroelectric field-effect transistor (FeFET) stacks, yet the coupled evolution of interfacial chemistry, defect distribution, and band alignment remains difficult to access because the …

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Operational cycling voltage dependence of the oxygen vacancy distribution in 6 nm Hf0.5Zr0.5O2 ferroelectric capacitors

N. Barrett, Lucía Pérez Ramírez, Somnath Kale, Gunjan Yadav et autres

We present a hard x-ray photoemission (HAXPES) study of the oxygen vacancy (VO) concentration profile in 6 nm Hf0.5Zr0.5O2 ferroelectric capacitors as a function of field cycling at three operational voltages, VOP, namely 1.5, 2.0, and 2.5 V. Pristine capacitors show a …

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Multi-Partner Project: Scalable, Ferroelectric-based Accelerators for Energy Efficient Edge AI (Ferro4EdgeAI)

Theofilos Spyrou, Yashvardhan Biyani, Konstantinos Stavrakakis, Rajendra Bishnoi et autres

The Computing-In-Memory (CIM) paradigm offers a promising solution to the memory-wall bottleneck that limits conventional Von Neumann architectures. By performing data processing at the same physical location where the data are stored, CIM-based architectures minimize costly data movement and drastically improve energy …

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Electron trapping/detrapping at oxygen vacancies and imprint evolution in La-doped Hf0.5Zr0.5O2 ferroelectric capacitors probed by hard x-ray photoelectron spectroscopy

Wassim Hamouda, Yoshiyuki Yamashita, Shigenori Ueda, Sylvia Matzen et autres

We evaluate the correlation between polarization-dependent oxygen vacancy profile and imprint in technologically relevant TiN/La-doped Hf0.5Zr0.5O2/TiN ferroelectric capacitors using hard x-ray photoelectron spectroscopy (HAXPES) with in situ biasing. The concentration of double positively charged oxygen vacancies (VO..) was inferred from the intensity …

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Correct quantification of oxygen vacancies in ferroelectric hafnia

Lucía Pérez Ramírez, Thierry Iung, V. S. Yadav, C. Lubin et autres

Determination of the oxygen vacancies (VO) distribution within ultra-thin film ferroelectric hafnia (HfO2)-based devices is crucial to engineering optimal properties for non-volatile memory and logic devices. So far, x-ray photoelectron spectroscopy (XPS) combined with Ar+ ion sputtering has been the predominantly used …

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Oxygen vacancy mobility and charge de-trapping in 6 nm HZO-based ferroelectric capacitors as a function of annealing temperature

Lucía Pérez Ramírez, Gunjan Yadav, N. Barrett, J. Coignus et autres

The steel and concrete containment building for the Dragon reactor. Project DRAGON

N. Barrett

The two containment buildings were handled on behalf of and under the general supervision of the project by the U.K.A.E.A. (Engineering Group). The main contractor for the design, construction and testing of the steel building was Whessoe Ltd., and Harland & Wolff …

Oxygen vacancy distribution and phase composition in scaled, Hf0.5Zr0.5O2-based ferroelectric capacitors

Thierry Iung, Lucía Pérez Ramírez, Andrei Gloskovskii, Chen-Yi Cho et autres

In this paper, we address correlations between film thickness, phase composition, and oxygen vacancy (VO) distribution in scaled, hafnia-based ferroelectric capacitors (FeCAPs), necessary to achieve low operating voltages, higher endurance, and advanced node integration. Using x-ray photoelectron spectroscopy, hard x-ray photoelectron spectroscopy, …

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Germanium surface segregation in highly doped Ge:β-Ga2O3 grown by molecular beam epitaxy observed by synchrotron radiation hard x-ray photoelectron spectroscopy

Anthony Boucly, Tyson C. Back, Thaddeus J. Asel, Brenton A. Noesges et autres

We present a study of Ge segregation at the surface of highly germanium-doped gallium oxide (2.5 × 1020 cm−3 nominal doping level) grown by molecular beam epitaxy. We probed the dopant concentration as a function of depth by hard x-ray photoelectron spectroscopy …

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Oxygen vacancy engineering in Si-doped, HfO2 ferroelectric capacitors using Ti oxygen scavenging layers

N. Barrett, Wassim Hamouda, C. Lubin, J. Laguerre et autres

In this paper, the ferroelectric properties of TiN/Ti/Si:HfO2/TiN stacks are shown to be modulated by the Ti oxygen scavenging layer, leading to improved remanent polarization and wake-up at low switching fields. Hard x-ray photoelectron spectroscopy is used to measure the oxygen vacancy …

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Ferroelastic Twin Angles at the Surface of CaTiO3 Quantified by Photoemission Electron Microscopy

Grégoire Magagnin, C. Lubin, M. Escher, N. Weber et autres

We use photoemission electron microscopy to measure the ferroelastic twin wall angles at the surface of CaTiO_{3} (001) and deduce the strain ordering. We analyze the angular dependence of the photoelectron emission from different domain surfaces, each with its own characteristic tilt …

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Tuning the properties of molecular organic layers at the micron-scale using low-energy electrons.

L. Amiaud, Leo Sala, Qiang Wu, C. Lubin et autres

International audience

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