Christopher J. Jezewski

Unveiling Phonon Contributions to Thermal Conductivity and the Applicability of the Wiedemann—Franz Law in Ruthenium and Tungsten Thin Films

Md. Rafiqul Islam, Pravin Karna, Niraj Bhatt, Sandip Thakur et autres

Abstract Thermal transport in nanoscale interconnects is dominated by intricate electron–phonon interactions and microstructural influences. As copper faces limitations at the nanoscale, tungsten and ruthenium have emerged as promising alternatives due to their substantial phonon contributions to thermal conductivity. Metals with stronger …

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Wafer-to-Wafer Bonding with Ultralow Thermal Resistance and High Bonding Energy

Wenhao Li, Feras Eid, Andrey Vyatskikh, Richard Vreeland et autres

Fusion bonding with micron-thick dielectrics (e.g.,$\text{SiO}_{2}, \text{SiN}$and SiCN) is the incumbent technology for the permanent bonding of thermal/mechanical enhancement components in 3D heterogeneous integration. The dielectrics' low thermal conductivities ($\sim 1-2 ~\mathrm{W} / \mathrm{m}-\mathrm{K}$) create a thermal bottleneck in architectures with high …

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Unveiling Phonon Contributions to Thermal Transport and the Failure of the Wiedemann-Franz Law in Ruthenium and Tungsten Thin Films

Md. Rafiqul Islam, Pravin Karna, Niraj Bhatt, Sandip Thakur et autres

Thermal transport in nanoscale interconnects is dominated by intricate electron-phonon interactions and microstructural influences. As copper faces limitations at the nanoscale, tungsten and ruthenium have emerged as promising alternatives due to their substantial phonon contributions to thermal conductivity. Metals with stronger phonon-mediated …

Subtractive Ruthenium Interconnects with Airgap

Ananya Dutta, Christopher J. Jezewski, Saima Siddiqui, Ian S. Jenkins et autres

Subtractive ruthenium interconnects are being researched as a metallization scheme to replace damascene Cu in tight pitch interconnect layers. Its main advantages are better resistance scalability than Cu with decreasing dimensions, the ability to achieve high aspect ratios, and its compatibility with …

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Evaluating size effects on the thermal conductivity and electron-phonon scattering rates of copper thin films for experimental validation of Matthiessen’s rule

Md. Rafiqul Islam, Pravin Karna, John A. Tomko, Eric R. Hoglund et autres

As metallic nanostructures shrink towards the size of the electronic mean free path, thermal conductivity decreases due to increased electronic scattering rates. Matthiessen's rule is commonly applied to assess changes in electron scattering rates, although this rule has not been validated experimentally …

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Ion Beam Deposition of Epitaxial 0001 In-Plane and Out-of-Plane Low-Resistivity Ruthenium for Interconnect Applications

Rutvik J. Mehta, Yuejing Wang, Frank M. Cerio, Robert Caldwell et autres

Ruthenium with favorable resistivity scaling effects is a promising candidate for nanometer scale interconnects. An anisotropic transport phenomenon results in a predicted orientation dependence for ruthenium with resistivity perpendicular to the basal 0001 planes expected to be significantly lower than along the …

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In situ formation of inhibitor species through catalytic surface reactions during area-selective atomic layer deposition of TaN

Marc J. M. Merkx, Ilker Tezsevin, Pengmei Yu, Thijs Janssen et autres

Small molecule inhibitors (SMIs) have been gaining attention in the field of area-selective atomic layer deposition (ALD) because they can be applied in the vapor-phase. A major challenge for SMIs is that vapor-phase application leads to a disordered inhibitor layer with lower …

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2D Materials in the BEOL

Carl H. Naylor, Kirby Maxey, Christopher J. Jezewski, Ashish Verma Penumatcha et autres

2D materials, such as Transition Metal Dichalcogenides (TMDs), have potential for large impact in future technologies due to their inherent atomic thickness. Here, we present multiple applications of 2D materials in the Back End of Line (BEOL). First, we report various 300 …

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Interface and layer periodicity effects on the thermal conductivity of copper-based nanomultilayers with tungsten, tantalum, and tantalum nitride diffusion barriers

Claudia Cancellieri, Ethan A. Scott, Jeffrey L. Braun, Sean W. King et autres

Nanomultilayers are complex architectures of materials stacked in sequence with layer thicknesses in the nanometer range. Their application in microelectronics is challenged by their thermal stability, conductivity, and interface reactivity, which can compromise their performance and usability. By using different materials as …

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Non-Volatile RRAM Embedded into 22FFL FinFET Technology

Oleg Golonzka, Ümüt Arslan, Mark T. Bohr, O. Baykan et autres

This paper presents key specifications of RRAM-based nonvolatile memory embedded into Intel 22FFL FinFET Technology. 22FFL is a high performance, ultra low power technology developed for mobile and RF applications providing extensive high voltage and analog support and high design flexibility combined …

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Nanoscale Buckling of Ultrathin Low-k Dielectric Lines during Hard-Mask Patterning

Gheorghe Stan, Cristian V. Ciobanu, Igor Levin, Hui Jae Yoo et autres

Commonly known in macroscale mechanics, buckling phenomena are now also encountered in the nanoscale world as revealed in today's cutting-edge fabrication of microelectronics. The description of nanoscale buckling requires precise dimensional and elastic moduli measurements, as well as a thorough understanding of …

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Demonstration of new planar capacitor (PCAP) vehicles to evaluate dielectrics and metal barrier thin films

Kevin L. Lin, Jeffrey Bielefeld, Jasmeet S. Chawla, Colin T. Carver et autres

Planar capacitors can quickly test material properties of metals and dielectrics for interconnects. A sidewall capacitor device is used to evaluate metal thin-film barriers. Etch stop planar capacitors in turn can test multi-layer etch stops, exposing differences between leaky and good etch …

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