Wafer-to-Wafer Bonding with Ultralow Thermal Resistance and High Bonding Energy

Le résumé fourni par la source

Fusion bonding with micron-thick dielectrics (e.g.,$\text{SiO}_{2}, \text{SiN}$and SiCN) is the incumbent technology for the permanent bonding of thermal/mechanical enhancement components in 3D heterogeneous integration. The dielectrics' low thermal conductivities ($\sim 1-2 ~\mathrm{W} / \mathrm{m}-\mathrm{K}$) create a thermal bottleneck in architectures with high power densities requiring effective heat spreading. To address this challenge, we report a newly developed 300 mm wafer-to-wafer bonding technology that is capable of achieving an order-of-magnitude reduction in thermal resistance over current approaches. The new process is carried out at ambient conditions using alternative materials and a commercial fusion bonder, without the need for plasma activation. We demonstrate that the bonding energy matches or exceeds that of fusion-bonded oxide within a temperature range below$350^{\circ} \mathrm{C}$. Thermoreflectance measurements indicate that the total thermal resistance of the new bonding layer is 10 X smaller than that of CVD silicon oxide with the same bond line thickness (BLT). Thermal analyses of different product architectures show that switching to this technology produces significant gains in cooling capability for high power and/or high-power density applications.

Ce résumé expose les affirmations des auteurs. BNTIC ne l’interprète pas comme une validation indépendante des résultats.