Ion Beam Deposition of Epitaxial 0001 In-Plane and Out-of-Plane Low-Resistivity Ruthenium for Interconnect Applications

Le résumé fourni par la source

Ruthenium with favorable resistivity scaling effects is a promising candidate for nanometer scale interconnects. An anisotropic transport phenomenon results in a predicted orientation dependence for ruthenium with resistivity perpendicular to the basal 0001 planes expected to be significantly lower than along the basal planes, but such films are challenging to deposit. We report the first deposition of epitaxial [0001] in-plane ruthenium thin films using a Veeco IBD300™ Ion beam deposition (IBD) tool. IBD with the highest sputter energy and fine-scale control of deposition energetics enables ideal microstructures for metal thin films. IBD of ruthenium achieve epitaxial [0001] in-plane and out-of-plane thin films in the as-deposited state with back-end-of-the-line (BEOL) compatible thermal budget. Electrical measurements of the as-deposited IBD ruthenium thin films shows ultra-low-resistivity and attractive thickness scaling. These results establish the combination of ion beam deposition and ruthenium as a promising approach for the next generation of integrated device interconnects.

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