Bochang Li

Electric field reconfiguration in W/ β -Ga2O3 Schottky barrier diodes under negative bias stress

Jiamin Liao, Xiang Zheng, Yibo Wang, Xiaole Jia et autres

In this work, the characteristics of W/Ga2O3 Schottky barrier diodes with Al2O3 passivation under negative bias stress (NBS) are investigated. Interestingly, the NBS treatment yields a significant 91% reduction in reverse leakage current (Ileakage) and a 29.7% enhancement in breakdown voltage (Vbreakdown), …

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Endurance beyond 10 billion cycles in wurtzite ferroelectrics by confining nitrogen vacancies

Ruiqing Wang, Feng Zhu, Haoji Qian, Jiuren Zhou et autres

Wurtzite ferroelectrics could provide a route to wafer-scale integrated ferroelectric memories but are limited by endurance, typically failing at ~10 8 cycles. We identified nitrogen-vacancy ( V N ) clustering and long-range percolative migration as the defect-mediated pathways that drive leakage-current growth …

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Nitrogen-vacancy-driven degradation mechanism in ferroelectric wurtzite AlScN

Ruiqing Wang, Jiuren Zhou, Xihui Yuan, Feng Zhu et autres

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Improved Interface Quality in β -Ga 2 O 3 MOSFETs With a Crystalline (AlGa) 2 O 3 Cap

Xiaole Jia, Shuqi Huang, Yibo Wang, Bochang Li et autres

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Effect of Strain Induced by Varying Bottom Electrode Thicknesses on Ferroelectric Properties of Pt/Al0.7Sc0.3N/Pt Capacitors

Yuan Fang, Xiaoxi Li, J J Li, Haiwen Xu et autres

Aluminum scandium nitride (Al1-xScxN) has emerged as a promising candidate for next-generation nonvolatile memories owing to its excellent large remanent polarization (Pr), high Curie temperature, and CMOS compatibility. However, its ferroelectric characteristics are highly sensitive to strain, which limits device scalability. Herein, …

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Two-Step Annealing for Leakage Suppression in β-Ga 2 O 3 MOSFETs: A Low-Frequency Noise Study

Chunxiao Yu, Xiang Zheng, Bochang Li, Genquan Han

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Annealing-Driven Strain-Relaxation Transition and Its Direct Impact on Transport in Heteroepitaxial β -Ga₂O₃ MOSFETs

Chunxiao Yu, Y N Wu, Yibo Wang, Bochang Li et autres

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Low Barrier Interface of NiO-Ti3C2O2 for Sulfur Hexafluoride Decomposition Gas-Sensing Application: A DFT Study

Qingfang Zhang, Yufeng Ding, Jitao Zhang, Qianyu Chen et autres

Abstract As an insulating medium in electrical equipment, the accurate detection of sulfur hexafluoride (SF6) decomposition products (H2S, SO2, SOF2 and CO) caused by insulation faults is crucial for safe operation of equipment. Although the intrinsic two-dimensional material Ti3C2O2 exhibits affinity toward …

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NH$_{3}$ Plasma Surface Treatment in $β$-Ga$_{2}$O$_{3}$: Interface Trap Density Reduction and MOSFET Performance Gains

Xiaole Jia, Shuqi Huang, Yue Wang, Bochang Li et autres

In this work, an NH3plasma treatment (NPT) is introduced to engineer the Al2O3/$\beta $-phase gallium oxide ($\beta $-Ga2O${}_{{3}}\text {)}$interface for high-performance MOS devices. The NPT effectively suppresses Ga suboxide-related surface states, leading to substantial reduction of interface trap density (${D}_{\text {it}}\text {)}$. …

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Impact of Co, Rh, Ir modification on gas-sensing characteristics of GaN nanotubes for SF6 decomposition product recognition

Qingfang Zhang, Yufeng Ding, Jitao Zhang, Qianyu Chen et autres

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4.1/3.5 kV breakdown voltage in depletion/enhancement-mode MOCVD-grown Ga 2 O 3 MOSFETs on sapphire substrates

chunxiao Yu, Yibo Wang, Bochang Li, Chenyu Liu et autres

Abstract In this work, we realized high-performance β -Ga 2 O 3 power MOSFETs grown via metal-organic chemical vapor deposition on sapphire substrates. High-resolution X-ray diffraction and HRTEM characterization confirmed single crystallinity of the β -Ga 2 O 3 heteroepitaxial film on …

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Reliability Enhancement of Ga 2 O 3 Heterojunction Diodes Due to Space-Charge Modulation

Chunxiao Yu, Haodong Hu, Xiang Zheng, Bochang Li et autres

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