Endurance beyond 10 billion cycles in wurtzite ferroelectrics by confining nitrogen vacancies
Ruiqing Wang, Feng Zhu, Haoji Qian, Jiuren Zhou et autres
Wurtzite ferroelectrics could provide a route to wafer-scale integrated ferroelectric memories but are limited by endurance, typically failing at ~10 8 cycles. We identified nitrogen-vacancy ( V N ) clustering and long-range percolative migration as the defect-mediated pathways that drive leakage-current growth …
cn, hk (code pays fourni par la source)
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