NH$_{3}$ Plasma Surface Treatment in $β$-Ga$_{2}$O$_{3}$: Interface Trap Density Reduction and MOSFET Performance Gains
Xiaole Jia, Shuqi Huang, Yue Wang, Bochang Li et autres
In this work, an NH3plasma treatment (NPT) is introduced to engineer the Al2O3/$\beta $-phase gallium oxide ($\beta $-Ga2O${}_{{3}}\text {)}$interface for high-performance MOS devices. The NPT effectively suppresses Ga suboxide-related surface states, leading to substantial reduction of interface trap density (${D}_{\text {it}}\text {)}$. …
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IEEE Transactions on Electron Devices