Stefano Michelis

High Step-Down Non-Isolated Hybrid Resonant DC-DC Converter for Point-of-Load Applications

Abdul Majid Bhat, Andrii Chub, Stefano Michelis

This paper presents a 48 V -to- $2.5 \mathrm{~V}, 5 \mathrm{~A}$ nonisolated dc-dc converter. The design of the converter is based on a hybrid resonant approach utilizing a tapped inductor and a resonant tank circuit to achieve high step-down voltage conversion while …

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A Monolithic Regulated 160 MHz Resonant DC-DC Converter

Giacomo Ripamonti, Stefano Michelis, Georgios Bantemits, Pablo Antoszczuk et autres

This paper presents a monolithic dual phase 2:1 DC-DC converter featuring a 2.0-2.5 V input range, employing quasi-resonant regulation and using LC resonant tanks with coupled inductors. The output voltage can be regulated in the 0.8 - 1 V range by regulating …

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Next generation fully integrated DCDC converters for HEP applications in 28 nm technology

Georgios Bantemits, Giacomo Ripamonti, Khalil Khalife, Mattia Balutto et autres

Abstract For the first time in the High-Energy Physics (HEP) community, a family of fully integrated radiation-hardened DC/DC converters, including all capacitors and inductors, has been developed. This paper presents the experimental results of three functional ASIC prototypes implemented in a 28 …

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Optimized rad-hard DC/DC converters for HEP applications

Nils Hans Van Der Blij, Sokratis Koseoglou, Georgios Bantemits, Giacomo Ripamonti et autres

Abstract The development of 48 V compatible DC/DC converters that are tolerant to high magnetic fields and radiation helps to reduce the cost and weight of the cabling, power supplies and cooling of High Energy Physics (HEP) experiments. In this paper, a …

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Measurement of the fractional radiation length of a pixel module for the CMS Phase-2 upgrade via the multiple scattering of positrons

W. Adam, T. Bergauer, K. Damanakis, M. Dragicevic et autres

Abstract High-luminosity particle collider experiments such as the ones planned at the High-Luminosity Large Hadron Collider require ever-greater vertexing precision of the tracking detectors, necessitating reductions in the material budget of the detectors. Traditionally, the fractional radiation length (x/X 0) of detectors …

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Radiation response of 28 nm CMOS transistors at high proton and neutron fluences for high energy physics applications

Gennaro Termo, G. Borghello, F. Faccio, Stefano Michelis et autres

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bPOL48V, a rad-hard 48V DC/DC Converter for Space and HEP Applications

Stefano Michelis, Nils Hans Van Der Blij, Giacomo Ripamonti, Pablo Antoszczuk

A radiation-hard DC/DC converter has been developed at CERN, which tolerates a higher input voltage (up to 48 V) and provides a larger output power than existing solutions. It is called bPOL48V, and it employs a commercial Gallium Nitride power device and …

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Neutron- and Proton-Induced Degradation of MOS Transistors in 28 nm CMOS Technology (September 2023)

Gennaro Termo, G. Borghello, F. Faccio, Stefano Michelis et autres

The 28 nm CMOS technology was selected as a promising candidate for upgrade of the electronics of particle detectors at CERN. Despite the robustness of this node to ultrahigh levels of total ionizing dose has been proven, the capability to withstand 10161 …

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Switched Tank Converter: Quasi-Resonant Regulation for Soft Start and Mismatch Mitigation Technique

Mattia Balutto, Giacomo Ripamonti, Pablo Antoszczuk, Stefano Michelis et autres

In recent years, there has been a significant increase in the power consumption of data centers. As a result, server rack architecture has shifted from using 12 V to higher voltage levels of 48–60 V. The conventional power delivery system in use …

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Quasi-regulation and mismatch mitigation technique for switched tank converters

Mattia Balutto, Giacomo Ripamonti, Pablo Antoszczuk, Stefano Michelis et autres

Data center power consumption has been increasing remarkably in the last decades, mainly due to the massive adoption of cloud computing. Due to the vast amount of power consumed, server rack architecture has switched from 12 V to (48 V – 60 …

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Fab-to-fab and run-to-run variability in 130 nm and 65 nm CMOS technologies exposed to ultra-high TID

Gennaro Termo, G. Borghello, F. Faccio, Stefano Michelis et autres

Abstract The discovery of a large fab-to-fab variability in the TID response of the CMOS technologies used in the design of ASICs for the particle detectors of the HL-LHC triggered a monitoring effort to verify the consistency of the CMOS production process …

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Design of a Radiation-Tolerant Bandgap Voltage Reference for HEP applications

G. Traversi, Luigi Gaioni, R. Ballabriga, D. Ceresa et autres

This work discusses the design of a bandgap voltage reference circuit to be operated in harsh radiation environments. The circuit, designed in a standard 28 nm CMOS technology with a core voltage supply of 0.9 V, exhibits in simulations an average output …

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