Next generation fully integrated DCDC converters for HEP applications in 28 nm technology

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Abstract For the first time in the High-Energy Physics (HEP) community, a family of fully integrated radiation-hardened DC/DC converters, including all capacitors and inductors, has been developed. This paper presents the experimental results of three functional ASIC prototypes implemented in a 28 nm CMOS technology. All prototypes utilize 0.9 V-rated transistors to ensure resilience to radiation levels up to 1 Grad. The prototypes include iPOL5V and iPOL2V3, which are state-of-the-art resonant DC/DC converters capable of regulating input voltages of 5 V and 2.3 V, respectively, down to an output range of 0.8–1 V. These converters achieve peak efficiencies of 67% and 80%, respectively. Additionally, a linear regulator, LinPOL1V2, has been designed and tested, enabling conversion from 1.2 V down to 0.8–1 V. The results demonstrate the performance of these integrated solutions and their suitability for operation in radiation environments.

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