Woohyun Hwang

Agentic TCAD Calibration Workflow for Oxide Semiconductor Transistors

Gyujun Jeong, Junmo Lee, Sungwon Cho, Woohyun Hwang et autres

Experimental TCAD calibration is essential for predictive technology modeling of emerging oxide semiconductor transistors. However, it remains time-consuming and expert dependent because of model ambiguity. Multiple physical models and parameter sets can reproduce the same measured transfer characteristics, while local fitting alone …

Simultaneous Enhancement of Performance and Stability in Dual‐Gate a‐IGZO Thin‐Film Transistors via Single‐Step Laser Annealing for Capacitor‐Less DRAM

권시현, Junil Kim, Geuntae Park, Minseok Kim et autres

ABSTRACT Wide‐bandgap amorphous oxide semiconductors (AOSs), particularly indium‐gallium‐zinc‐oxide (IGZO), offer ultralow off‐current and back‐end‐of‐line compatibility, making them attractive for advanced dynamic random access memory (DRAM). In capacitor‐less two‐transistor (2T0C) DRAM, dual‐gate (DG) a‐IGZO TFTs are promising read transistors, but achieving a stable …

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Thermal Processing Limits in Oxide-Channel Ferroelectric Field Effect Transistors

Lance Fernandes, Yu-Hsin Kuo, Chengyang Zhang, Priyankka Ravikumar et autres

In this work, we report a systematic study of the impact of high-temperature post-capping thermal annealing on the memory characteristics of Oxide-semiconductor channel ferroelectric field-effect transistors (OS-FeFETs). Using an identical engineered ferroelectric gate stack 8nm Hf0.5Zr0.5O2 (HZO) / 3 nm Al2O3 / …

Thermal Processing Limits in Oxide-Channel Ferroelectric Field Effect Transistors

Lance Fernandes, Yu-Hsin Kuo, Chengyang Zhang, Priyankka Ravikumar et autres

In this work, we report a systematic study of the impact of high-temperature post-capping thermal annealing on the memory characteristics of Oxide-semiconductor channel ferroelectric field-effect transistors (OS-FeFETs). Using an identical engineered ferroelectric gate stack—8nm Hf0.5Zr0.5O2(HZO) / 3 nm Al2O3/ 8 nm HZO …

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Channel-Side Interlayer Engineering in Laminated Fe-FETs: Trap-Driven Optimization of Memory Window, Retention, and Disturb in Ferroelectric NAND Flash

Lance Fernandes, Minji Shon, Prasanna Venkatesan, Priyankka Ravikumar et autres

In this work, we demonstrate for the first time that laminated Fe-FETs for Fe-NAND exhibit a distinct behavior: despite the common expectation that higher-$k$channel-side interlayers (C-ILs) enhance reliability by lowering the equivalent oxide thickness (EOT), lower-$k$C-ILs instead deliver superior memory-window (MW), retention, …

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ALD Oxidant as A Tuning Knob for Memory Window Expansion in Ferroelectric FETs for Vertical NAND Applications

Ranie Jeyakumar, Prasanna Venkatesan, Lance Fernandes, Salma Soliman et autres

Dielectric inserts are widely used to expand the memory window (MW) in ferroelectric FETs (FeFETs) for vertical NAND applications, with prior efforts focused primarily on material selection and stack positioning. Here, we demonstrate that the ALD oxidant used for the Al2O3 interlayer …

ALD Oxidant as A Tuning Knob for Memory Window Expansion in Ferroelectric FETs for Vertical NAND Applications

Ranie Jeyakumar, Prasanna Venkatesan, Lance Fernandes, Salma Soliman et autres

Dielectric inserts are widely used to expand the memory window (MW) in ferroelectric FETs (FeFETs) for vertical NAND applications, with prior efforts focused primarily on material selection and stack positioning. Here, we demonstrate that the ALD oxidant used for the Al2O3 interlayer …

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Channel-Side Interlayer Engineering in Laminated FeFETs: Trap-Driven Optimization of Memory Window, Retention, and Disturb in Ferroelectric NAND Flash

IEEE International Symposium on Reliability Physics 2026, Suman Datta, Lance Fernandes, Woohyun Hwang et autres

We demonstrate that laminated FeFETs for Fe-NAND exhibit a distinct channel-side interlayer (C-IL) behavior: low-k SiO2 delivers superior memory window, retention, and pass-disturb reliability compared to high-k Al2O3 and HfO2. Experiments and TCAD reveal that although high-k C-ILs lower EOT, their higher …

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Physics-informed AI Accelerated Retention Analysis of Ferroelectric Vertical NAND: From Day-Scale TCAD to Second-Scale Surrogate Model

Gyujun Jeong, Sungwon Cho, Minji Shon, Nam Hoon Kim et autres

Ferroelectric field-effect transistors (FeFET)-based vertical NAND (Fe-VNAND) has emerged as a promising candidate to overcome z-scaling limitations with lower programming voltages. However, the data retention of 3D Fe-VNAND is hindered by the complex interaction between charge detrapping and ferroelectric depolarization. Developing optimized …

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Physics-informed AI Accelerated Retention Analysis of Ferroelectric Vertical NAND: From Day-Scale TCAD to Second-Scale Surrogate Model

Gyujun Jeong, Sungwon Cho, Minji Shon, Nam Hoon Kim et autres

Ferroelectric field-effect transistors (FeFET)-based vertical NAND (Fe-VNAND) has emerged as a promising candidate to overcome z-scaling limitations with lower programming voltages. However, the data retention of 3D Fe-VNAND is hindered by the complex interaction between charge detrapping and ferroelectric depolarization. Developing optimized …

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A Comprehensive Modeling of Gate Stack Interlayer Engineering for Ferroelectric Vertical NAND

Minji Shon, Chinsung Park, Prasanna Venkatesan Ravindran, Lance Fernandes et autres

Ferroelectric field-effect transistors (FeFETs)-based vertical NAND (Fe-VNAND) has emerged as a promising solution to z-scaling limitations of conventional charge trap layer (CTL)-based VNAND (Fig. 1) with reduced programming voltage (from $\gt30 \mathrm{~V}$ to $(\lt)15 \mathrm{~V}$) [1]. Band engineered FeFETs are actively being …

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Oxygen‐Doped 2D In2Se3 Nanosheets with Extended In‐Plane Lattice Strain for Highly Efficient Piezoelectric Energy Harvesting

Ji Yeon Kim, Woohyun Hwang, Seo Yeon Han, Ye Seul Jung et autres

Abstract With the emergence of electromechanical devices, considerable efforts have been devoted to improving the piezoelectricity of 2D materials. Herein, an anion‐doping approach is proposed as an effective way to enhance the piezoelectricity of α‐In2Se3 nanosheets, which has a rare asymmetric structure …

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