Lance Fernandes

Tuning the Coercive Field in Ferroelectric Hf0.5Zr0.5O2-Al2O3 Heterostructures via Interfacial Charge Dynamics

Marshall B. Frye, Chanyoung Kim, Jeong‐Woo Sun, John Wellington-Johnson et autres

Interleaving dielectric layers into ferroelectric Hf0.5Zr0.5O2 (HZO) films increases the memory window (MW) beyond what is accounted for by the dielectric constants. Determining the physical mechanisms behind these MW improvements is critical to reaching the full potential of HZO FeNAND. Here, we …

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A Dual‐Memory Ferroelectric Transistor Emulating Synaptic Metaplasticity for High‐Speed Reservoir Computing (Adv. Electron. Mater. 13/2026)

Yifan Wang, Muhammad Sakib Shahriar, Salma Soliman, Noah Vaillancourt et autres

Dual-Memory Synaptic Metaplasticity The cover image illustrates a ferroelectric transistor embedded within a brain-inspired reservoir network. The central device couples nonvolatile ferroelectric polarization in the gate stack with transient channel relaxation, visually represented by polarization motifs and fading temporal waveforms. This dual-memory …

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Thermal Processing Limits in Oxide-Channel Ferroelectric Field Effect Transistors

Lance Fernandes, Yu-Hsin Kuo, Chengyang Zhang, Priyankka Ravikumar et autres

In this work, we report a systematic study of the impact of high-temperature post-capping thermal annealing on the memory characteristics of Oxide-semiconductor channel ferroelectric field-effect transistors (OS-FeFETs). Using an identical engineered ferroelectric gate stack 8nm Hf0.5Zr0.5O2 (HZO) / 3 nm Al2O3 / …

Thermal Processing Limits in Oxide-Channel Ferroelectric Field Effect Transistors

Lance Fernandes, Yu-Hsin Kuo, Chengyang Zhang, Priyankka Ravikumar et autres

In this work, we report a systematic study of the impact of high-temperature post-capping thermal annealing on the memory characteristics of Oxide-semiconductor channel ferroelectric field-effect transistors (OS-FeFETs). Using an identical engineered ferroelectric gate stack—8nm Hf0.5Zr0.5O2(HZO) / 3 nm Al2O3/ 8 nm HZO …

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A Dual‐Memory Ferroelectric Transistor Emulating Synaptic Metaplasticity for High‐Speed Reservoir Computing

Yifan Wang, Salma Soliman, Noah Vaillancourt, Lance Fernandes et autres

ABSTRACT The exponential growth of edge artificial intelligence demands material‐focused solutions to overcome energy consumption and latency limitations when processing real‐time temporal data. Physical reservoir computing (PRC) offers an energy‐efficient paradigm but faces challenges due to limited device scalability and reconfigurability. Additionally, …

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Materials Design Principles for Large Memory Windows: Coercive Voltage Engineering in Ferroelectric– Dielectric Heterostructures (Adv. Electron. Mater. 8/2026)

Prasanna Venkatesan, Hari Jayasankar, Salma Soliman, Priyankka Ravikumar et autres

Ferroelectric–Dielectric Heterostructures A nanoscale ferroelectric–dielectric heterostructure is illustrated atop a 3D NAND array, highlighting leakage-governed voltage division that amplifies the effective coercive voltage across the ferroelectric layer. In their Research Article (10.1002/aelm.202500702), Prasanna Venkatesan, Asif Khan, and co-workers, the dielectric insert is …

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Channel-Side Interlayer Engineering in Laminated Fe-FETs: Trap-Driven Optimization of Memory Window, Retention, and Disturb in Ferroelectric NAND Flash

Lance Fernandes, Minji Shon, Prasanna Venkatesan, Priyankka Ravikumar et autres

In this work, we demonstrate for the first time that laminated Fe-FETs for Fe-NAND exhibit a distinct behavior: despite the common expectation that higher-$k$channel-side interlayers (C-ILs) enhance reliability by lowering the equivalent oxide thickness (EOT), lower-$k$C-ILs instead deliver superior memory-window (MW), retention, …

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ALD Oxidant as A Tuning Knob for Memory Window Expansion in Ferroelectric FETs for Vertical NAND Applications

Ranie Jeyakumar, Prasanna Venkatesan, Lance Fernandes, Salma Soliman et autres

Dielectric inserts are widely used to expand the memory window (MW) in ferroelectric FETs (FeFETs) for vertical NAND applications, with prior efforts focused primarily on material selection and stack positioning. Here, we demonstrate that the ALD oxidant used for the Al2O3 interlayer …

ALD Oxidant as A Tuning Knob for Memory Window Expansion in Ferroelectric FETs for Vertical NAND Applications

Ranie Jeyakumar, Prasanna Venkatesan, Lance Fernandes, Salma Soliman et autres

Dielectric inserts are widely used to expand the memory window (MW) in ferroelectric FETs (FeFETs) for vertical NAND applications, with prior efforts focused primarily on material selection and stack positioning. Here, we demonstrate that the ALD oxidant used for the Al2O3 interlayer …

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Channel-Side Interlayer Engineering in Laminated FeFETs: Trap-Driven Optimization of Memory Window, Retention, and Disturb in Ferroelectric NAND Flash

IEEE International Symposium on Reliability Physics 2026, Suman Datta, Lance Fernandes, Woohyun Hwang et autres

We demonstrate that laminated FeFETs for Fe-NAND exhibit a distinct channel-side interlayer (C-IL) behavior: low-k SiO2 delivers superior memory window, retention, and pass-disturb reliability compared to high-k Al2O3 and HfO2. Experiments and TCAD reveal that although high-k C-ILs lower EOT, their higher …

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Enabling Radiation Hardness in Solid-State NAND Storage Utilizing a Laminated Ferroelectric Stack

Lance Fernandes, Stuart E. Wodzro, Prasanna Venkatesan, Priyankka Gundlapudi Ravikumar et autres

High Resolution Image Download MS PowerPoint Slide NAND flash forms the core of modern solid-state storage, which is critical for data-intensive AI applications, yet charge-trap NAND suffers rapid threshold-voltage ( V th ) degradation under ionizing radiation, causing reliability challenges for space …

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Correction to “Hf/Zr Superlattice-Based High-κ Gate Dielectrics with Dipole Layer Engineering for Advanced CMOS”

Taeyoung Song, Sanghyun Kang, Yu-Hsin Kuo, Jiayi Chen et autres