Accès ouvert
2024
conference-paper
OpenAlex
Amani Salim, Farihin Adzlan, Iman Ismail, Adam Zahanuddin et autres
SUSANNE, a nanophysical electrochemical synthesis (NES) system, enables scalable production of nanostructured scalable devices (nSD) with high reproducibility.Vertical graphene oxide (VGO) structures on screen-printed carbon electrodes (SPCEs), which are used in biosensors, are called nSDα.Surface morphologies of nSDα vary with input parameters …
my
(code pays fourni par la source)
2018
book-chapter
OpenAlex
Zhi‐Xun Shen, D. S. Dessau, Barrett O. Wells, David M. King et autres
us
(code pays fourni par la source)
2004
article
OpenAlex
Zhiyi Yu, Yong Li Liang, Corey Overgaard, Xiaoming Hu et autres
us
(code pays fourni par la source)
2003
conference-paper
OpenAlex
Ravi Droopad, J. Curless, Zhiyi Yu, Dirk C. Jordan et autres
The semiconductor industry is facing the challenge of scaling of the gate dielectric of Si CMOS devices, which are continually being made smaller. Presently SiO/sub 2/ is being used, but at thickness below 20/spl Aring/, it suffers from high tunneling leakage current …
us
(code pays fourni par la source)
2003
article
OpenAlex
Xiaoming Hu, Hua Li, Yong Li Liang, Yungeng Wei et autres
The formation of interfacial layers between silicon and the overgrown epitaxial SrTiO3 as a function of the growth temperature has been studied in detail using x-ray photoelectron spectroscopy and high-resolution transmission electron microscopy. Models for the chemical compositions and atomic bonding states …
us
(code pays fourni par la source)
2002
article
OpenAlex
Yu Lei, Catherine Stampfl, D. S. Marshall, T. Eshrich et autres
We identify the previously unknown mechanism whereby rocksalt ${\mathrm{Ta}}_{x}\mathrm{N}$ can be continuously tuned from conducting to insulating through changes in stoichiometry. Experimental measurements on thin films, combined with electronic structure calculations on a host of native defects, show that the tunability arises …
us
(code pays fourni par la source)
2002
article
OpenAlex
Arthur J. Freeman, Catherine Stampfl, Liuqi Yu, D. S. Marshall et autres
2002
article
OpenAlex
Zhiyi Yu, Yong Li Liang, Hua Li, J. Curless et autres
us
(code pays fourni par la source)
2002
article
OpenAlex
Zhiyi Yu, Ravindranath Droopad, Dirk C. Jordan, J. Curless et autres
The combination of the superior electrical and optical performance of III-V semiconductors with mature silicon technology has been very attractive for the semiconductor industry. The successful integration of the III-V compound semiconductors with silicon opens the door to many advanced electronic and …
us
(code pays fourni par la source)
2001
article
OpenAlex
Alberto Herrera‐Gómez, Francisco Servando Aguirre-Tostado, Ya‐Sen Sun, P. Pianetta et autres
The growth of Sr on n-type Si(001) was studied in detail for coverages between 0 and 1 monolayer (ML) using core level photoemission spectroscopy. In a similar manner, the Sr saturation coverage was studied in the 600–925 °C temperature range. Data analysis …
mx, us
(code pays fourni par la source)
2001
article
OpenAlex
Jun Wang, D. S. Marshall
us
(code pays fourni par la source)
2000
article
OpenAlex
Xiaoming Hu, Xiang Yao, Charles A. Peterson, Dror Sarid et autres
us
(code pays fourni par la source)