Geon Woong Eom

Two‐Stage Plasma Reactor for Abatement, Capture, and Cleaning of TEOS in a Semiconductor Foreline

In Yong Park, Jin Young Lee, Sang Ho Lee, Geon Woong Eom et autres

ABSTRACT A two‐stage foreline plasma reactor is designed and fabricated, and its feasibility for TEOS abatement in PECVD is tested. During the deposition step, the solid material from the TEOS decomposition is captured on the electrode surface as a thin film, which …

kr (code pays fourni par la source)

Multi-scale computational approach to understand plasma assisted sulfidation for growth mechanism of MoS2

Jinill Cho, Tae‐Hyun Kim, Nayoon Kang, Jinhyoung Lee et autres

kr (code pays fourni par la source)

Development of industrial-scale L-shaped dielectric barrier discharge reactor for improving capacity retention of graphite anode using plasma pretreatment

Geon Woong Eom, Min Young Hur, Hyung Cheoul Shim, Seungmin Hyun et autres

Abstract Electrode slurry coatings on the current collector of a Li-ion battery suffer from high mass loading owing to the severe floating of the binder during solvent drying. Atmospheric plasma pretreatment of the Cu current collector forms a functional group on its …

kr (code pays fourni par la source)

Direct monitoring of generated particles in plasma enhanced chemical vapor deposition process using temperature compensating quartz crystal microbalance

Il Ryu Jang, Hyeong‐U Kim, Taehoon Kim, Minwoo Kweun et autres

kr, us (code pays fourni par la source)

Analysis of Gas Detection Sensitivity of a Self Plasma-Optical Emission Spectrometer Using an N2 and Ar Gas-Mixing Evaluation System

Geon Woong Eom, Sang Ho Lee, In Yong Park, Woo Seok Kang et autres

A self plasma-optical emission spectrometer (SP-OES) is a sensor that analyzes the residual gases in an exhaust line by detecting the intrinsic wavelength of the species excited by the self-plasma module.SP-OESs are used in semiconductor processes, such as cleaning, etching, and deposition, …

kr (code pays fourni par la source)

Enhancing Si3N4 Selectivity over SiO2 in Low-RF Power NF3–O2 Reactive Ion Etching: The Effect of NO Surface Reaction

Nguyen Hoang Tung, Hee-Soo Lee, Duy Khoe Dinh, Daewoong Kim et autres

Highly selective etching of silicon nitride (Si3N4) and silicon dioxide (SiO2) has received considerable attention from the semiconductor community owing to its precise patterning and cost efficiency. We investigated the etching selectivity of Si3N4 and SiO2 in an NF3/O2 radio-frequency glow discharge. …

kr (code pays fourni par la source)

Temperature‐Dependent Phase Transition in WS2 for Reinforcing Band‐to‐Band Tunneling and Photoreactive Random Access Memory Application

Gunhoo Woo, Jinill Cho, H. J. Yeom, Min Young Yoon et autres

Negative Differential Resistance Devices In article number 2300202, Taesung Kim and co-workers present outstanding improvement in tunneling performance and achieve clear photoreactive NDR behavior via temperature-based phase modification of TMD material. By using a metal layer sulfidation method, distorted 1T WS2 with …

kr (code pays fourni par la source)

Direct Monitoring of Particle Generation in the Pecvd Process Using Self-Temperature Compensating Quartz Crystal Microbalance

Il Ryu Jang, Hyeong‐U Kim, Taehoon Kim, Minwoo Kweun et autres

kr (code pays fourni par la source)

Direct Monitoring of Generated Particles in Plasma Enhanced Chemical Vapor Deposition Process Using Temperature Compensating Quartz Crystal Microbalance

Il Ryu Jang, Hyeong‐U Kim, Taehoon Kim, Minwoo Kweun et autres

kr (code pays fourni par la source)

Direct Monitoring of Generated Particles in Plasma Enhanced Chemical Vapor Deposition Process Using Temperature Compensating Quartz Crystal Microbalance

Il Ryu Jang, Hyeong‐U Kim, Taehoon Kim, Minwoo Kweun et autres

Temperature‐Dependent Phase Transition in WS2 for Reinforcing Band‐to‐Band Tunneling and Photoreactive Random Access Memory Application

Gunhoo Woo, Jinill Cho, H. J. Yeom, Min Young Yoon et autres

In the era of big data, negative differential resistance (NDR) devices have attracted significant attention as a means of handling massive amounts of information. While 2D materials have been used to achieve NDR behavior, their intrinsic material characteristics have produced limited performance …

kr (code pays fourni par la source)