Two‐Stage Plasma Reactor for Abatement, Capture, and Cleaning of TEOS in a Semiconductor Foreline

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ABSTRACT A two‐stage foreline plasma reactor is designed and fabricated, and its feasibility for TEOS abatement in PECVD is tested. During the deposition step, the solid material from the TEOS decomposition is captured on the electrode surface as a thin film, which completely disappears after the subsequent cleaning step. OES shows that the foreline plasma is stably maintained, and QMS measurements show that the TEOS DRE exceeds 99%. The thin film formed on the electrode surface during the deposition is composed of SiO x . Analysis of the OES and QMS results shows that SiO x plasma etching occurs during the cleaning step. The results demonstrate that the reactor has a high potential as a pre‐treatment (pre‐abatement) system, thereby contributing to carbon neutrality.

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