Philippe Bézard

Transient-Assisted Processing (TAP): A Path to Low-Emission Dry Etching in the Ångström-Node Era

Atefeh Fathzadeh, Philippe Bézard, Emily E. Gallagher, Giel Arnauts et autres

Plasma etching is a major source of greenhouse gas emissions in integrated circuit manufacturing. While existing etching technologies have primarily been optimized for throughput or precision, the next generation of plasma etching must also meet sustainability objectives. This includes minimizing the ecological …

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Enabling chemically amplified resists towards tight pitch EUV patterning by directed self-assembly

Lander Verstraete, R. Vallat, Julie Van Bel, Min-Gi Jo et autres

Combining directed self-assembly (DSA) with chemically amplified resists (CARs) can boost the effectiveness of CARs for tight pitch extreme ultraviolet (EUV) lithography patterning. The objective of this work is to optimize the obtained DSA patterns after etching the block-copolymer (BCP) structures into …

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Hexagonal contact holes patterning at 32 nm pitch: influence of the stack and of the etching process on AEI performances

Sara Paolillo, Dieter Van den Heuvel, Philippe Bézard, Christophe Béral et autres

For further scaling of capacitors in 6F2 DRAM cell, this study explores the feasibility of using 0.33 Numerical Aperture (NA) EUV lithography to pattern hexagonal contact holes with a minimum center-to-center (C2C) distance of 32nm. The patterns are printed onto a Chemically …

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Rectification of extreme ultraviolet lithography patterns by directed self-assembly: a roughness and defectivity study

Julie Van Bel, Lander Verstraete, Hyo Seon Suh, Philippe Bézard et autres

Single-exposure extreme ultraviolet (EUV) lithography is quickly advancing as a replacement for argon fluoride immersion (ArFi)-based multiple patterning approaches for printing the most critical features in semiconductor devices. However, the dimensional scaling of EUV lithography patterns is hampered by stochastic effects, resulting …

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Material and process optimization for EUV pattern rectification by DSA

Lander Verstraete, Hyo Seon Suh, Julie Van Bel, Byeong‐U Bak et autres

Continuous scaling by extreme ultraviolet (EUV) lithography is tightening the patterning requirements for photoresist materials. Specifically, chemically amplified resists (CAR) are facing significant challenges to keep supporting the patterning needs. In view of this, complementing EUV lithography with directed self-assembly (DSA) of …

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Patterning optimization for single mask bit-line-periphery and storage-node-landing-pad DRAM layers using 0.33NA EUV lithography at the resolution limit

Van Tuong Pham, Jeonghoon Lee, Kaushik Sah, Ying-Lin Chen et autres

To continue the future of dynamic random-access memory (DRAM) manufacturing with EUV and high NA EUV, alternative techniques for nanofabrication are required to reduce the cost and simplify the processes. In this report, we present the results of the development of a …

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Towards low damage and fab-compatible top-contacts in MX2 transistors using a combined synchronous pulse atomic layer etch and wet-chemical etch approach

Souvik Kundu, Dennis H. van Dorp, Tom Schram, Quentin Smets et autres

In the quest for process pathfinding for 2D-FET device integration in a 300mm fab, we demonstrate the concept of damascene-compatible top source-drain contacts. Top oxide removal is realized by a combination of self-limited synchronous pulse atomic layer etching of HfO2-AlOx stack followed …

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Scaled-down deposited underlayers for EUV lithography

Mihir Gupta, Joao Antunes Afonso, Philippe Bézard, R. Vallat et autres

To further enable device scaling in HVM, new patterning materials are needed to meet the more stringent requirements such as line width and edge roughness (LWR and LER), dose sensitivity, pattern collapse, etch resistance and defectivity. The continuous progression of the shrinking …

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Mitigating stochastics in EUV lithography by directed self-assembly

Lander Verstraete, Hyo Seon Suh, Julie Van Bel, Purnota Hannan Timi et autres

Owing to photon shot noise and inhomogeneous distribution of the molecular components in a chemically amplified resist, resist patterns defined by extreme ultraviolet (EUV) lithography tend to suffer from stochastic variations. These stochastic variations are becoming more severe as critical dimensions continue …

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EUV lithography line-space pattern rectification using block copolymer directed self-assembly: a roughness and defectivity study

Julie Van Bel, Lander Verstraete, Hyo Seon Suh, Stefan De Gendt et autres

For printing the most critical features in semiconductor devices, single exposure extreme ultraviolet (EUV) lithography is quickly advancing as a replacement for ArF immersion-based multipatterning approaches. However, the transition from 193 nm to 13.5 nm light is severely limiting the number of …

Exploring the synergy between EUV lithography and directed self-assembly

Hyo Seon Suh, Lander Verstraete, Julie Van Bel, Philippe Bézard et autres

Directed self-assembly (DSA) process has been introduced and developed for more than a decade as one of the alternative advanced patterning techniques in the semiconductor industry. Block copolymer (BCP) is self-assembling into the desired pattern on the lithographically defined pre-pattern on the …

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Dry-Etching Processes for High-Aspect-Ratio Features with Sub-10 nm Resolution High-χ Block Copolymers

Gwenaelle Pound-Lana, Philippe Bézard, Camille Petit-Étienne, Sébastien Cavalaglio et autres

Directed self-assembly of block copolymers (BCP) is a very attractive technique for the realization of functional nanostructures at high resolution. In this work, we developed full dry-etching strategies for BCP nanolithography using an 18 nm pitch lamellar silicon-containing block copolymer. Both an …

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