Exploring the synergy between EUV lithography and directed self-assembly

Le résumé fourni par la source

Directed self-assembly (DSA) process has been introduced and developed for more than a decade as one of the alternative advanced patterning techniques in the semiconductor industry. Block copolymer (BCP) is self-assembling into the desired pattern on the lithographically defined pre-pattern on the wafer. Such a bottom-up approach is used to define the pattern which is typically hard to achieve with the traditional top-down approach. As an example, the density of the pattern can be increased with DSA by the factor of 3 or 4 from the 193i lithography pattern. Although similar dimension becomes now accessible with EUV lithography, DSA keeps its benefit; the structure is simply defined by the phase separation of materials rather than the complex light-matter interactions as required for EUV resist patterning. In this presentation, we will discuss the synergetic impact of the combination of EUV and DSA.

Ce résumé expose les affirmations des auteurs. BNTIC ne l’interprète pas comme une validation indépendante des résultats.