Accès ouvert
2026
preprint
OpenAlex
Cheng Liu, Deyaa Abol-Fotouh, Huiming Bu, Yan Gao et autres
Replacing fluorinated binders with sustainable alternatives is a key challenge for advancing environmentally compatible battery technologies, particularly in aqueous systems, where sustainability in all components is generally expected. Here, a free-standing α-MnO2 composite cathode based on a hydrophilic bacterial cellulose (BC) scaffold …
es, Égypte, kr, cn
(code pays fourni par la source)
Accès ouvert
2026
article
OpenAlex
Cheng Liu, Deyaa Abol-Fotouh, Huiming Bu, Yan Gao et autres
A brief description of this repository and its contents. This repository contains data management scripts and resources for the paper 'From Binders to Scaffolds: Free‑Standing Bacterial Cellulose Cathodes for Sustainable Aqueous Zn-MnO2 Batteries', created by the Institute of Materials Science of Barcelona …
es, cn
(code pays fourni par la source)
Accès ouvert
2026
article
OpenAlex
Cheng Liu, Deyaa Abol-Fotouh, Huiming Bu, Yan Gao et autres
A brief description of this repository and its contents. This repository contains data management scripts and resources for the paper 'From Binders to Scaffolds: Free‑Standing Bacterial Cellulose Cathodes for Sustainable Aqueous Zn-MnO2 Batteries', created by the Institute of Materials Science of Barcelona …
es, cn
(code pays fourni par la source)
2026
conference-paper
OpenAlex
Nirmaan Shanker, Shogo Mochizuki, Takashi Ando, S. Reboh et autres
us
(code pays fourni par la source)
2026
conference-paper
OpenAlex
Chen Zhang, Carl Radens, Utkarsh Bajpai, S. Reboh et autres
us
(code pays fourni par la source)
2026
conference-paper
OpenAlex
Ruilong Xie, Kevin Brew, Wonkeun Chung, Oleg Gluschenkov et autres
us
(code pays fourni par la source)
2024
conference-paper
OpenAlex
Chen Zhang, J. Strane, Lijuan Zou, Suin Yun et autres
We present a monolithic stacked FET architecture featuring a stepped channel structure where the bottom FET channels are wider than the top. Such a design relieves high aspect ratio process challenges by reducing the total stack height and provides better performance as …
us
(code pays fourni par la source)
2024
conference-paper
OpenAlex
Ruilong Xie, Wonhyuk Hong, Chen Zhang, Joongku Lee et autres
This paper examines various approaches for integrating backside power distribution network (BSPDN) with nanosheet transistor technologies. Deep Trench Via (DTV) based BSPDN schemes, except for Shifted Frontside Via Backside Power rail (SFVBP), do not offer cell level scaling benefits, but via resistance …
kr
(code pays fourni par la source)
2023
conference-paper
OpenAlex
Shogo Mochizuki, Nicolas Loubet, Pial Mirdha, Curtis Durfee et autres
Stacked gate-all-around nanosheet (NS) pFET and nFET transistors have been fabricated on Si (110) and Si (001) substrates to determine the device performance dependence on Si channel orientation for short and long-channel NS devices. Systematic studies showed that pFET (110) NS channels …
us
(code pays fourni par la source)
Accès ouvert
2023
erratum
OpenAlex
Wei Cao, Huiming Bu, M. Vinet, Min Cao et autres
us, fr, tw, jp, kr
(code pays fourni par la source)
2023
article
OpenAlex
Wei Cao, Huiming Bu, M. Vinet, Min Cao et autres
us, fr, tw, jp, kr
(code pays fourni par la source)
2023
conference-paper
OpenAlex
B. Senapati, Jeongho Do, Daniel J. Dechene, Seunghyun Song et autres
Vertical-Transport (VTFET) Nanosheet Technology is an attractive solution to enable aggressive CMOS scaling in the sub-45nm contact-gate-pitch (CGP) regime. By decoupling the classic tradeoff of S/D contacts, gate length & contact-gate-pitch (CGP), VTFET technology overcomes middle-of-the-line (MOL) dominated performance pinch-points by providing …
us, kr
(code pays fourni par la source)