Wei Cao

Tailoring growth kinetics through direct sublimation for scalable two-dimensional semiconductor synthesis

Jae Hwan Chu, Guenhyung Oh, Wei Cao, Arnab Pal et autres

Scalable integration of two-dimensional semiconductors (2DSs) into advanced electronic platforms requires synthesis approaches that unify high uniformity, high throughput, reduced thermal budget, and robust defect control within manufacturable process flows. Current vapor-phase synthesis routes for 2DSs—including chemical vapor deposition, metal–organic chemical vapor …

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Three-dimensional transistors with two-dimensional semiconductors for future CMOS scaling

Arnab Pal, Tanmay Chavan, Wei Cao, Kaustav Banerjee

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Analysis and Implication of Electrothermal Effects in Emerging 3D Transistors and Integration Topologies with Two-Dimensional Semiconductors

Lin Xu, Ankit Kumar, Emmanuel Quezada, Jianfeng Jiang et autres

This work presents the first comprehensive electrothermal modeling and analysis of two-dimensional semiconductor (2DS) based emerging 3D transistor architectures including nanosheet field-effect transistors (NSFETs) and complementary FETs (CFETs). Using a multi-scale (from materials and interfaces to devices) simulation framework that accurately accounts …

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Exploration and Analysis of Metallic, Optical, and Superconducting Cryo-Interconnects for Large-Scale Quantum Computers

Ankit Kumar, A Kim, Kunjesh Agashiwala, Lin Xu et autres

Determining optimal interconnect solutions is crucial to realize high-performance and energy-efficient large scale quantum computers (QC). This work presents the first comprehensive exploration and analysis of a wide range of interconnect technologies under cryogenic conditions. We determine the best on-chip interconnect materials …

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Strain engineering in 2D FETs: Physics, status, and prospects

Ankit Kumar, Lin Xu, Arnab Pal, Kunjesh Agashiwala et autres

In this work, we explore the physics and evaluate the merits of strain engineering in two-dimensional van der Waals semiconductor-based FETs (field-effect-transistors) using DFT (density functional theory) to determine the modulation of the channel material properties under strain, and subsequently, their effect …

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An ultra energy-efficient hardware platform for neuromorphic computing enabled by 2D-TMD tunnel-FETs

Arnab Pal, Zichun Chai, Junkai Jiang, Wei Cao et autres

Brain-like energy-efficient computing has remained elusive for neuromorphic (NM) circuits and hardware platform implementations despite decades of research. In this work we reveal the opportunity to significantly improve the energy efficiency of digital neuromorphic hardware by introducing NM circuits employing two-dimensional (2D) …

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A Framework for Exploring Gate-Dielectric Materials for High-Performance Two-Dimensional Field-Effect-Transistors

Ankit Kumar, Lin Xu, Anita Wing Yi Ho, Arnab Pal et autres

The choice and engineering of the gate-dielectric (GD) is of paramount importance to the performance and energy-efficiency of two-dimensional (2D) field-effect-transistors (FETs) that are considered to be primary candidates for sub-10 nm gate length (Lg) metal-oxide-semiconductor FETs (MOSFETs). Despite remarkable progress achieved …

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Advancing High-Performance Large-Scale Quantum Computing with Cryogenic 2D-CMOS

Kunjesh Agashiwala, Arnab Pal, Hang Cui, Tanmay Chavan et autres

We present the first comprehensive evaluation of 2D-semiconductors (2DS) as a promising materials platform for realizing cryogenic-CMOS interface-electronics to enable highperformance large-scale quantum computing. Our study encompasses ab-initio density functional theory and quantum transport simulations as well as the development of a …

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A Materials-Device Co-Design Framework for Realizing Ultra Energy-Efficient All-2D Spin-Logic Circuits with 2D-Materials

Shuo Zhang, Arnab Pal, Wen‐Yan Yin, Wei Cao et autres

Although two-dimensional (2D)-materials (2DM) with a wide range of spin orbit coupling (SOC), and exotic structural and electrical properties, are very attractive for designing both spin-transistors and interconnects, the lack of a thorough understanding of spin dynamics has prevented the practical realization …

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Publisher Correction: The future transistors

Wei Cao, Huiming Bu, M. Vinet, Min Cao et autres

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The future transistors

Wei Cao, Huiming Bu, M. Vinet, Min Cao et autres

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Exploration and Exploitation of Strain Engineering in 2D-FETs

Ankit Kumar, Arnab Pal, Kamyar Parto, Wei Cao et autres

Two-dimensional (2D) van der Waals semiconductors, especially transition-metal-dichalcogenides (TMDs), have emerged as prospective channel materials for sub-10 nm channel length ($L_{CH}$) FETs due to their superior scalability and low-power characteristics arising from their large bandgap, suitable effective mass ($m^{\ast}$), atomic-scale thickness, and …

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